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A Benzene-Thermal Synthetic Route to Nanocrystalline GaN
Abstract
A thermal reaction of Li 3 N and GaCl 3 in which benzene was used as the solvent under pressure has been carried out for the preparation of 30-nanometer particles of gallium nitride (GaN) at 280°C. This temperature is much lower than that of traditional methods, and the yield of GaN reached 80%. The x-ray powder diffraction pattern indicated that sample was mainly hexagonal-phase GaN with a small fraction of rocksalt-phase GaN, which has a lattice constant a = 4.100 angstroms. This rocksalt structure, which had been observed previously only under high pressure (at least 37 gigapascals) was observed directly with high-resolution electron microscopy.
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Metadata
- Authors
- Xie, Y., Qian, Y., Wang, W., Zhang, S., & Zhang, Y.
- Venue
- Science
- Published
- 1996-06-28
- Volume
- 272
- Issue
- 5270
- Pages
- 1926-1927
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2028198182
- Cited by
- 432
- References
- 0
- FWCI
- 12.74
- Type
- journal article
- Language
- en
- Open access
- closed
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- Xie, Y., Qian, Y., Wang, W., Zhang, S., & Zhang, Y. (1996). A Benzene-Thermal Synthetic Route to Nanocrystalline GaN. Science. https://doi.org/10.1126/science.272.5270.1926
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