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Cited by 849

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes

Medeiros-Ribeiro, Gilberto, Bratkovski, Alexander M., Kamins, Theodore I., Ohlberg, Douglas A. A., Williams, R. Stanley·1998·Science

Abstract

Chemical vapor deposition of germanium onto the silicon (001) surface at atmospheric pressure and 600 degrees Celsius has previously been shown to produce distinct families of smaller (up to 6 nanometers high) and larger (all approximately 15 nanometers high) nanocrystals. Under ultrahigh-vacuum conditions, physical vapor deposition at approximately the same substrate temperature and growth rate produced a similar bimodal size distribution. In situ scanning tunneling microscopy revealed that the smaller square-based pyramids transform abruptly during growth to significantly larger multifaceted domes, and that few structures with intermediate size and shape remain. Both nanocrystal shapes have size-dependent energy minima that result from the interplay between strain relaxation at the facets and stress concentration at the edges. A thermodynamic model similar to a phase transition accounts for this abrupt morphology change.

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Metadata

Authors
Medeiros-Ribeiro, G., Bratkovski, A. M., Kamins, T. I., Ohlberg, D. A. A., & Williams, R. S.
Venue
Science
Published
1998-01-16
Volume
279
Issue
5349
Pages
353-355
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2081046745
Cited by
849
References
7
FWCI
63.69
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes. https://app.cochat.ai/papers/10.1126/science.279.5349.353
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Medeiros-Ribeiro, G., Bratkovski, A. M., Kamins, T. I., Ohlberg, D. A. A., & Williams, R. S. (1998). Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes. Science. https://doi.org/10.1126/science.279.5349.353

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