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Integrated Optoelectronic Devices Based on Conjugated Polymers

Sirringhaus, Henning, Tessler, Nir, Friend, Richard H.·1998·Science

Abstract

An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10 6 . The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.

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Metadata

Authors
Sirringhaus, H., Tessler, N., & Friend, R. H.
Venue
Science
Published
1998-06-12
Volume
280
Issue
5370
Pages
1741-1744
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2094405563
Cited by
2,736
References
0
FWCI
78.29
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Integrated Optoelectronic Devices Based on Conjugated Polymers. https://app.cochat.ai/papers/10.1126/science.280.5370.1741
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Sirringhaus, H., Tessler, N., & Friend, R. H. (1998). Integrated Optoelectronic Devices Based on Conjugated Polymers. Science. https://doi.org/10.1126/science.280.5370.1741

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.