Student or educator? Sign up with your school email and get 6 months of Pro free.
Cited by 2,411

The DOI matches its Crossref record.

Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals

Penn, R. Lee, Banfield, Jillian F.·1998·Science

Abstract

Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.

Overview

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Integrity signals

Registry

Crossref · 10.1126/science.281.5379.969

Cites

Statistics

Verification

Claims the paper makes

The claims and statistics of this paper haven’t been checked yet.

Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.

A few free checks a day · papers already verified open instantly · results are public

Self-check

Percentages, sums and reported differences re-computed from the paper’s own numbers.

The self-check needs the paper’s full text.

Citations

Cited by

See all 2,411

Metadata

Authors
Penn, R. L., & Banfield, J. F.
Venue
Science
Published
1998-08-14
Volume
281
Issue
5379
Pages
969-971
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2158343197
Cited by
2,411
References
0
FWCI
9.42
Type
journal article
Language
en
Open access
closed

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals. https://app.cochat.ai/papers/10.1126/science.281.5379.969
The paper
Penn, R. L., & Banfield, J. F. (1998). Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals. Science. https://doi.org/10.1126/science.281.5379.969

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.