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Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface
Abstract
Electronic junctions on edge: Two-dimensional materials such as graphene are attractive materials for making smaller transistors because they are inherently nanoscale and can carry high currents. However, graphene has no band gap and the transistors are “leaky”; that is, they are hard to turn off. Related transition metal dichalcogenides (TMDCs) such as molybdenum sulfide have band gaps. Transistors based on these materials can have high ratios of “on” to “off” currents. However, it is often difficult to make a good voltage-biased (p-n) junction between different TMDC materials. Li et al. succeeded in making p-n heterojunctions between two of these materials, molybdenum sulfide and tungsten selenide. They did this not by stacking the layers, which make a weak junction, but by growing molybdenum sulfide on the edge of a triangle of tungsten selenide with an atomically sharp boundary Science , this issue p. 524
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Citations
Cited by
Duan, X., Wang, C., Pan, A., Yu, R., & Duan, X. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00507h · Cited by 1,161
Interface-Assisted Synthesis of 2D Materials: Trend and Challenges
Dong, R., Zhang, T., & Feng, X. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.8b00056 · Cited by 710
Solution‐Processed Two‐Dimensional MoS2 Nanosheets: Preparation, Hybridization, and Applications
Zhang, X., Lai, Z., Tan, C., & Zhang, H. (2016) · Angewandte Chemie International Edition · doi:10.1002/anie.201509933 · Cited by 678
General synthesis of two-dimensional van der Waals heterostructure arrays
Li, J., Yang, X., Liu, Y., Huang, B., Wu, R., Zhang, Z., Zhao, B., Ma, H., Dang, W., Wei, Z., et al. (2020) · Nature · doi:10.1038/s41586-020-2098-y · Cited by 601
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Metadata
- Authors
- Li, M.-Y., Shi, Y., Cheng, C.-C., Lu, L.-S., Lin, Y.-C., Tang, H.-L., Tsai, M.-L., Chu, C.-W., Wei, K.-H., He, J.-H., Chang, W.-H., Suenaga, K., & Li, L.-J.
- Venue
- Science
- Published
- 2015-07-31
- Volume
- 349
- Issue
- 6247
- Pages
- 524-528
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W1832666745
- Cited by
- 1,203
- References
- 0
- FWCI
- 53.82
- Type
- journal article
- Language
- en
- Open access
- closed
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- Li, M.-Y., Shi, Y., Cheng, C.-C., Lu, L.-S., Lin, Y.-C., Tang, H.-L., Tsai, M.-L., Chu, C.-W., Wei, K.-H., He, J.-H., Chang, W.-H., Suenaga, K., & Li, L.-J. (2015). Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface. Science. https://doi.org/10.1126/science.aab4097
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