The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
MoS2transistors with 1-nanometer gate lengths
Abstract
A flatter route to shorter channels: High-performance silicon transistors can have gate lengths as short as 5 nm before source-drain tunneling and loss of electrostatic control lead to unacceptable leakage current when the device is off. Desai et al.explored the use of MoS 2 as a channel material, given that its electronic properties as thin layers should limit such leakage. A transistor with a 1-nm physical gate was constructed with a MoS 2 bilayer channel and a single-walled carbon nanotube gate electrode. Excellent switching characteristics and an on-off state current ratio of ∼10 6 were observed. Science, this issue p.99
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Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Electronic Transport in Two-Dimensional Materials
Sangwan, V. K., & Hersam, M. C. (2018) · Annual Review of Physical Chemistry · doi:10.1146/annurev-physchem-050317-021353 · Cited by 336
2D MoS2 Neuromorphic Devices for Brain‐Like Computational Systems
Jiang, J., Guo, J., Wan, X., Yang, Y., Xie, H., Niu, D., Yang, J., He, J., Gao, Y., & Wan, Q. (2017) · Small · doi:10.1002/smll.201700933 · Cited by 328
Black phosphorus and its isoelectronic materials
Xia, F., Wang, H., Hwang, J. C. M., Neto, A. H. C., & Yang, L. (2019) · Nature Reviews Physics · doi:10.1038/s42254-019-0043-5 · Cited by 322
Metadata
- Authors
- Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H.-S. P., & Javey, A.
- Venue
- Science
- Published
- 2016-10-07
- Volume
- 354
- Issue
- 6308
- Pages
- 99-102
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2528423716
- Cited by
- 1,511
- References
- 2
- FWCI
- 67.67
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: MoS2transistors with 1-nanometer gate lengths. https://app.cochat.ai/papers/10.1126/science.aah4698
- The paper
- Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H.-S. P., & Javey, A. (2016). MoS2transistors with 1-nanometer gate lengths. Science. https://doi.org/10.1126/science.aah4698
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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