The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material
Open accessAbstract
Making a large-gap topological insulator: Although of interest to basic research, topological insulators (TIs) have not yet lived up to their technological potential. This is partly because their protected surface-edge state usually lives within a narrow energy gap, with its exotic transport properties overwhelmed by the ordinary bulk material. Reis et al. show that a judicious choice of materials can make the gap wide enough for the topological properties to be apparent at room temperature. Numerical calculations indicate that a monolayer of Bismuth grown on SiC(0001) is a two-dimensional TI with a large energy gap. The researchers fabricated such a heterostructure and characterized it using scanning tunneling spectroscopy. The size of the experimentally measured gap was consistent with the calculations. Science , this issue p. 287
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Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
Bernevig, B. A., Hughes, T. L., & Zhang, S.-C. (2006) · Science · doi:10.1126/science.1133734 · Cited by 7,090
Z 2 Topological Order and the Quantum Spin Hall Effect
Kane, C. L., & Mele, E. J. (2005) · Physical Review Letters · doi:10.1103/physrevlett.95.146802 · Cited by 6,460
Quantum Spin Hall Insulator State in HgTe Quantum Wells
König, M., Wiedmann, S., Brüne, C., Roth, A., Buhmann, H., Molenkamp, L. W., Qi, X.-L., & Zhang, S.-C. (2007) · Science · doi:10.1126/science.1148047 · Cited by 6,151
Nonlocal Transport in the Quantum Spin Hall State
Roth, A., Brüne, C., Buhmann, H., Molenkamp, L. W., Maciejko, J., Qi, X.-L., & Zhang, S.-C. (2009) · Science · doi:10.1126/science.1174736 · Cited by 916
Cited by
Jiang, X., Kuklin, A. V., Baev, A., Ge, Y., Ågren, H., Zhang, H., & Prasad, P. N. (2020) · Physics Reports · doi:10.1016/j.physrep.2019.12.006 · Cited by 914
Quantum spin Hall state in monolayer 1T'-WTe2
Tang, S., Zhang, C., Wong, D., Pedramrazi, Z., Tsai, H.-Z., Jia, C., Moritz, B., Claassen, M., Ryu, H., Kahn, S., et al. (2017) · Nature Physics · doi:10.1038/nphys4174 · Cited by 846
Higher-order topology in bismuth
Schindler, F., Wang, Z., Vergniory, M. G., Cook, A. M., Murani, A., Sengupta, S., Kasumov, A. Y., Deblock, R., Jeon, S., Drozdov, I., et al. (2018) · Nature Physics · doi:10.1038/s41567-018-0224-7 · Cited by 837
Bismuthene for highly efficient carbon dioxide electroreduction reaction
Yang, F., Elnabawy, A. O., Schimmenti, R., Song, P., Wang, J., Peng, Z., Yao, S., Deng, R., Song, S., Lin, Y., et al. (2020) · Nature Communications · doi:10.1038/s41467-020-14914-9 · Cited by 508
Interacting topological insulators: a review
Rachel, S. (2018) · Reports on Progress in Physics · doi:10.1088/1361-6633/aad6a6 · Cited by 382
Metadata
- Authors
- Reis, F., Li, G., Dudy, L., Bauernfeind, M., Glass, S., Hanke, W., Thomale, R., Schäfer, J., & Claessen, R.
- Venue
- Science
- Published
- 2017-07-21
- Volume
- 357
- Issue
- 6348
- Pages
- 287-290
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2493021935
- Cited by
- 1,039
- References
- 7
- FWCI
- 55.97
- Type
- journal article
- Language
- en
- Open access
- green
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- Reis, F., Li, G., Dudy, L., Bauernfeind, M., Glass, S., Hanke, W., Thomale, R., Schäfer, J., & Claessen, R. (2017). Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material. Science. https://doi.org/10.1126/science.aai8142
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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