The DOI matches its Crossref record; 46 of the 46 references it cites were found in a registry or an index.
Scale-free ferroelectricity induced by flat phonon bands in HfO 2
Abstract
The atomic-scale structure of hafnium oxide explains ferroelectric properties for very thin films.
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Cites
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Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
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Cited by
The fundamentals and applications of ferroelectric HfO2
Schroeder, U., Park, M. H., Mikolajick, T., & Hwang, C. S. (2022) · Nature Reviews Materials · doi:10.1038/s41578-022-00431-2 · Cited by 710
Metadata
- Authors
- Lee, H.-J., Lee, M., Lee, K., Jo, J., Yang, H., Kim, Y., Chae, S. C., Waghmare, U., & Lee, J. H.
- Venue
- Science
- Published
- 2020-09-11
- Volume
- 369
- Issue
- 6509
- Pages
- 1343-1347
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W3038683582
- Cited by
- 485
- References
- 46
- FWCI
- 18.14
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Lee, H.-J., Lee, M., Lee, K., Jo, J., Yang, H., Kim, Y., Chae, S. C., Waghmare, U., & Lee, J. H. (2020). Scale-free ferroelectricity induced by flat phonon bands in HfO 2. Science. https://doi.org/10.1126/science.aba0067
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.