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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Open accessAbstract
Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN p-n junction LED are reported for the first time. It was found that the LEEBI treatment drastically lowers the resistivity and remarkably enhances the PL efficiency of MOVPE-grown Mg-doped GaN. The Hall effect measurement of this Mg-doped GaN treated with LEEBI at room temperature showed that the hole concentration is ∼2·10 16 cm-3, the hole mobility is ∼8 cm 2/V·s and the resistivity is ∼35 Ω·cm. The p-n junction LED using Mg-doped GaN treated with LEEBI as the p-type material showed strong near-band-edge emission due to the hole injection from the p-layer to the n-layer at room temperature.
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Citations
Cited by
Properties of GaN and related compounds studied by means of Raman scattering
Harima, H. (2002) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/14/38/201 · Cited by 699
Controllable p- and n-type behaviours in emissive perovskite semiconductors
Xiong, W., Tang, W., Zhang, G., Yang, Y., Fan, Y., Zhou, K., Zou, C., Zhao, B., & Di, D. (2024) · Nature · doi:10.1038/s41586-024-07792-4 · Cited by 209
Kim, W., Botchkarev, A. E., Salvador, A., Popovici, G., Tang, H., & Morkoç, H. (1997) · Journal of Applied Physics · doi:10.1063/1.365801 · Cited by 168
Metadata
- Authors
- Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 1989-12-01
- Volume
- 28
- Issue
- 12A
- Pages
- L2112
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2069099261
- Cited by
- 2,002
- References
- 0
- FWCI
- 4.97
- Type
- journal article
- Language
- en
- Open access
- bronze
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- CoChat. (2026). Citation check: P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI). https://app.cochat.ai/papers/10.1143/jjap.28.l2112
- The paper
- Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I. (1989). P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI). Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.28.l2112
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