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Low Dielectric Constant Materials for ULSI Interconnects
Abstract
▪ Abstract As integrated circuit (IC) dimensions continue to decrease, RC delay, crosstalk noise, and power dissipation of the interconnect structure become limiting factors for ultra-large-scale integration of integrated circuits. Materials with low dielectric constant are being developed to replace silicon dioxide as interlevel dielectrics. In this review, the general requirements for process integration and material properties of low-k dielectrics are first discussed. The discussion is focused on the challenge in developing materials with low dielectric constant but strong thermomechanical properties. This is followed by a description of the material characterization techniques, including several recently developed for porous materials. Finally, the material characteristics of candidate low-k dielectrics will be discussed to illustrate their structure-property relations.
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Citations
Cites
Thermal conductivity measurement from 30 to 750 K: the 3ω method
Cahill, D. G. (1990) · Review of Scientific Instruments · doi:10.1063/1.1141498 · Cited by 1,928
Cited by
Low dielectric constant materials for microelectronics
Maex, K., Baklanov, M. R., Shamiryan, D., lacopi, F., Brongersma, S. H., & Yanovitskaya, Z. S. (2003) · Journal of Applied Physics · doi:10.1063/1.1567460 · Cited by 1,634
Low Dielectric Constant Materials
Volksen, W., Miller, R. D., & Dubois, G. (2010) · Chemical Reviews · doi:10.1021/cr9002819 · Cited by 964
Molecular Design of Free Volume as a Route to Low-κ Dielectric Materials
Long, T. M., & Swager, T. M. (2003) · Journal of the American Chemical Society · doi:10.1021/ja0360945 · Cited by 279
The role of vacuum ultraviolet in H2 plasma treatment on SiO2 aerogel film
Jung, S.-B., Park, H.-H., & Kim, H. (2003) · Applied Surface Science · doi:10.1016/s0169-4332(03)00508-7 · Cited by 4
Metadata
- Authors
- Morgen, M., Ryan, E. T., Zhao, J.-H., Hu, C., Cho, T., & Ho, P. S.
- Venue
- Annual Review of Materials Science
- Publisher
- Annual Reviews
- Published
- 2000-08
- Volume
- 30
- Issue
- 1
- Pages
- 645-680
- ISSN
- 0084-6600 (ISSN-L)
- OpenAlex
- W1898734385
- Cited by
- 394
- References
- 1
- FWCI
- 10.94
- Type
- journal article
- Language
- en
- Open access
- closed
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- Morgen, M., Ryan, E. T., Zhao, J.-H., Hu, C., Cho, T., & Ho, P. S. (2000). Low Dielectric Constant Materials for ULSI Interconnects. Annual Review of Materials Science. https://doi.org/10.1146/annurev.matsci.30.1.645
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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