Cited by 1333D IC and TSV technologiesElectronic Packaging and Soldering TechnologiesSemiconductor Lasers and Optical Devices

Adhesive Bonding of InP∕InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene

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Roelkens, G., Brouckaert, J., Van Thourhout, D., Baets, R., Nötzel, R., Smit, M.·2006·Journal of The Electrochemical Society

Abstract

The process of bonding InP ∕ InGaAsP dies to a processed silicon-on-insulator wafer using sub- 300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.

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Crossref · 10.1149/1.2352045

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  • Surface topography requirements can be relaxed, and bonding strengthened using an intermediate adhesive, but thermal dissipation, long-term stability, optical power handling, and drift properties need to be studied further.

    “Surface topography requirements can be relaxed, and bonding strengthened using an intermediate adhesive57–59 but thermal dissipation, long-term stability, optical power handling, and drift properties need to be studied further60.”

    From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [59]

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References 17 · Cited by 133

Authors
Roelkens, G., Brouckaert, J., Van Thourhout, D., Baets, R., Nötzel, R., & Smit, M.
Affiliations
  • Ghent University (BE)
  • Eindhoven University of Technology (NL)
Venue
Journal of The Electrochemical Society
Published
2006
Volume
153
Issue
12
Pages
G1015
ISSN
0013-4651 (ISSN-L)
OpenAlex
W2113580656
Cited by
133
References
17
Citations by year
2026: 1 · 2025: 2 · 2024: 4 · 2023: 1 · 2022: 1 · 2021: 4 · 2020: 3 · 2018: 6 · 2017: 4 · 2016: 5 · 2015: 9 · 2014: 13 · 2013: 14 · 2012: 13
FWCI
9.79
Type
journal article
Language
en
Open access
Locations
  • Journal of The Electrochemical Society (publishedVersion)
  • TU/e Research Portal (publishedVersion, other-oa)
  • Ghent University Academic Bibliography (Ghent University) (submittedVersion, other-oa)
  • TU/e Research Portal (submittedVersion)
  • TU/e Research Portal (submittedVersion, other-oa)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › 3D IC and TSV technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Electronic Packaging and Soldering Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
Keywords
adhesive bonding, silicon-on-insulator wafers, die attach, planarization, bond strength

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