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Cited by 217

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

First Principles Model of Amorphous Silicon Lithiation

Chevrier, V. L., Dahn, J. R.·2009·Journal of The Electrochemical Society

Abstract

A protocol to simulate the lithiation of amorphous Si at room temperature is presented. One important step in the protocol is the identification of spherical voids in the lithiated structure. The protocol is simple, easily implemented and automated, and can be used with any modeling code capable of structural optimization. The protocol was used in conjunction with density functional theory and projector augmented wave data sets to accurately reproduce the potential composition curve of an experimental Li / Li x Si electrochemical cell at room temperature. Volume changes as a function of lithiation obtained from the protocol were also in good agreement with experiment. Based on the agreement with experiment, the protocol appears to yield structures representative of amorphous Li x Si obtained when lithiating Si at room temperature.

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Crossref · 10.1149/1.3111037

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Metadata

Authors
Chevrier, V. L., & Dahn, J. R.
Venue
Journal of The Electrochemical Society
Published
2009
Volume
156
Issue
6
Pages
A454
ISSN
0013-4651 (ISSN-L)
OpenAlex
W2036855874
Cited by
217
References
1
FWCI
9.77
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: First Principles Model of Amorphous Silicon Lithiation. https://app.cochat.ai/papers/10.1149/1.3111037
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Chevrier, V. L., & Dahn, J. R. (2009). First Principles Model of Amorphous Silicon Lithiation. Journal of The Electrochemical Society. https://doi.org/10.1149/1.3111037

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.