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Electronic Properties of Semiconductor Nanowires
Abstract
This paper provides a review of the state-of-the-art electronic-structure calculations of semiconductor nanowires. Results obtained using empirical k · p, empirical tight-binding, semi-empirical pseudopotential, and with ab initio methods are compared. For conciseness, we will restrict our detailed discussions to free-standing plain and modulated nanowires. Connections to relevant experimental data, particularly band gaps and polarization anisotropy, will be made since these results depend crucially on the electronic properties. For completeness, a brief review on the synthesis of nanowires is included.
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Tamayo, L., Azócar, M., Kogan, M., Riveros, A., & Páez, M. (2016) · Materials Science and Engineering: C · doi:10.1016/j.msec.2016.08.041 · Cited by 366
Pourhashem, S., Vaezi, M. R., & Rashidi, A. (2017) · Surface and Coatings Technology · doi:10.1016/j.surfcoat.2017.01.013 · Cited by 286
Metadata
- Authors
- Voon, L. C. L. Y., Zhang, Y., Lassen, B., Willatzen, M., Xiong, Q., & Eklund, P. C.
- Venue
- Journal of Nanoscience and Nanotechnology
- Publisher
- American Scientific Publishers
- Published
- 2008-01-01
- Volume
- 8
- Issue
- 1
- Pages
- 1-26
- ISSN
- 1533-4880 (ISSN-L)
- OpenAlex
- W2324411148
- Cited by
- 533
- References
- 0
- FWCI
- 43.49
- Type
- journal article
- Language
- en
- Open access
- closed
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- Voon, L. C. L. Y., Zhang, Y., Lassen, B., Willatzen, M., Xiong, Q., & Eklund, P. C. (2008). Electronic Properties of Semiconductor Nanowires. Journal of Nanoscience and Nanotechnology. https://doi.org/10.1166/jnn.2008.n03
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