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Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6

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Xiao, Zewen, Lei, Hechang, Zhang, Xiao, Zhou, Yuanyuan, Hosono, Hideo, Kamiya, Toshio·2015·Bulletin of the Chemical Society of Japan

Abstract

Cs2SnI6, a variant of perovskite CsSnI3, is gaining interest as a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I−, and Sn4+ ions and that the band gap is primarily made of occupied I− 5p6 valence band maximum (VBM) and unoccupied Sn4+ 5s conduction band minimum (CBM) similar to SnO2. In this work, we performed density functional theory (DFT) calculations and revealed that the real oxidation state of the Sn ion in Cs2SnI6 is +2 similar to CsSnI3. The +2 oxidation state of Sn originates from 2 ligand holes (L+) in the [SnI6]2− octahedron unit, where the ligand [I6] cluster has the apparent [I66−L+2]4− oxidation state, because the band gap is formed mainly by occupied I 5p VBM and unoccupied I 5p CBM. The +2 oxidation state of Sn and the band gap originate from the intracluster hybridization and stabilized by the strong covalency of the Sn–I bonds.

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Metadata

Authors
Xiao, Z., Lei, H., Zhang, X., Zhou, Y., Hosono, H., & Kamiya, T.
Venue
Bulletin of the Chemical Society of Japan
Published
2015-05-27
Volume
88
Issue
9
Pages
1250-1255
ISSN
  • 0009-2673 (ISSN-L)
  • 1348-0634
OpenAlex
W2127767604
Cited by
167
References
2
FWCI
5.13
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6. https://app.cochat.ai/papers/10.1246/bcsj.20150110
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Xiao, Z., Lei, H., Zhang, X., Zhou, Y., Hosono, H., & Kamiya, T. (2015). Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6. Bulletin of the Chemical Society of Japan. https://doi.org/10.1246/bcsj.20150110

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