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Observation of Raman emission in silicon waveguides at 154 µm

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Claps, Ricardo, Dimitropoulos, Dimitri, Han, Yan, Jalali, Bahram·2002·Optics Express

Abstract

We report the first measurements of spontaneous Raman scattering from silicon waveguides. Using a 1.43 m pump, both forward and backward scattering were measured at 1.54 m from Silicon-On-Insulator (SOI) waveguides. From the dependence of the Stokes power vs. pump power, we extract a value of (4.1 +/- 2.5) x 10-7 cm-1 Sr-1 for the Raman scattering efficiency. The results suggest that a silicon optical amplifier is within reach. The strong optical confinement in silicon waveguides is an attractive property as it lowers the pump power required for the onset of Raman scattering. The SiGe material system is also discussed.

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Metadata

Authors
Claps, R., Dimitropoulos, D., Han, Y., & Jalali, B.
Venue
Optics Express
Published
2002-11-04
Volume
10
Issue
22
Pages
1305
ISSN
1094-4087 (ISSN-L)
OpenAlex
W1985663858
Cited by
167
References
0
FWCI
8.76
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: Observation of Raman emission in silicon waveguides at 154 µm. https://app.cochat.ai/papers/10.1364/oe.10.001305
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Claps, R., Dimitropoulos, D., Han, Y., & Jalali, B. (2002). Observation of Raman emission in silicon waveguides at 154 µm. Optics Express. https://doi.org/10.1364/oe.10.001305

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