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A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector
Open accessAbstract
We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections.
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In case of using high-accuracy flip-chip bonding machine with less than 1 μm, the efficiency in the worst case could be improved to be more than 50%.
“In case of using high-accuracy flip-chip bonding machine with less than 1 μm [9], the efficiency in the worst case could be improved to be more than 50%.”
From On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide (2010) · cites this paper as [9]
The Device structure and fabrication section describes plasma-assisted wafer bonding, not a flip-chip bonding machine or sub-1 μm placement accuracy. Experiment and results reports 50–55% internal photodetector quantum efficiency, but does not connect it to bonding accuracy or a worst-case efficiency improvement. Searches for flip-chip alignment and coupling efficiency found no passage addressing that prediction; page numbers were unavailable in our copy. (LLM, conf=0.76)
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Research works printed but not linked: 5
- [3]G. Masini, G. Capellini, J. Witzens, and C. Gunn, “A Four-Channel, 10 Gbps Monolithic Optical Receiver in 130nm CMOS with Integrated Ge Waveguide Photodetectors,” Optical Fiber Communication Conference (OFC), PDP31, (2007).
- [4]A. O. Splett, T. Zinke, B. Schueppert, K. Petermann, H. Kibbel, H. Herzog, and H. Presting, “Integrated optoelectronic waveguide detectors in SiGe for optical communications,” Proc. SPIE 2550, 224–234 (1995). Crossref
- [5]M. W. Geis, S. J. Spector, M. E. Grein, R. T. Schulein, J. U. Yoon, D. M. Lennon, S. Deneault, F. Gan, F. X. Kaertner, and T. M. Lyszczarz, “CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band,” IEEE Photon. Technol. Lett. 19, 152–154 (2007). Crossref
- [6]J. W. Raring and L. A. Coldren, “40-Gb/s Widely Tunable Transceivers,” IEEE J. Sel. Topics Quantum Electron. 13, 3–14 (2007). Crossref
- [8]H. Park, A. W. Fang, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “An electrically pumped AlGaInAs-Silicon Evanescent Amplifier,” IEEE Photon. Technol. Lett. 19, 230–232 (2007). Crossref
Cited by
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Ohira, K., Kobayashi, K., Iizuka, N., Yoshida, H., Ezaki, M., Uemura, H., Kojima, A., Nakamura, K., Furuyama, H., & Shibata, H. (2010) · Optics Express · doi:10.1364/oe.18.015440 · Cited by 73
Metadata
- Authors
- Park, H., Kuo, Y.-H., Fang, A. W., Jones, R., Cohen, O., Paniccia, M. J., & Bowers, J. E.
- Affiliations
- University of California, Santa Barbara (US)
- Intel (United States) (US)
- Venue
- Optics Express
- Publisher
- Optica Publishing Group
- Published
- 2007
- Volume
- 15
- Issue
- 21
- Pages
- 13539
- ISSN
- 1094-4087 (ISSN-L)
- OpenAlex
- W2052407789
- Cited by
- 105
- References
- 0
- Citations by year
- 2024: 2 · 2023: 2 · 2022: 3 · 2020: 2 · 2019: 5 · 2018: 3 · 2017: 3 · 2016: 6 · 2015: 9 · 2014: 2 · 2013: 8 · 2012: 11
- FWCI
- 13.24
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Licence
- Locations
- Optics Express (publishedVersion)
- PubMed (publishedVersion)
- Funders
- Defense Advanced Research Projects Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor Lasers and Optical Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Photorefractive and Nonlinear Optics
- Keywords
- AlGaInAs, silicon photonics, hybrid integration, evanescent waveguide, optical preamplifier, photodetectors, optical amplifiers, 1550 nm, responsivity, receiver sensitivity, 2.5 Gb/s, reflection minimization
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