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31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate

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Yin, Tao, Cohen, Rami, Morse, Mike M., Sarid, Gadi, Chetrit, Yoel, Rubin, Doron, Paniccia, Mario J.·2007·Optics Express

Abstract

We report on evanescently coupled Ge waveguide photodetectors that are grown on top of Si rib waveguides. A Ge waveguide detector with a width of 7.4mum and length of 50 mum demonstrated an optical bandwidth of 31.3 GHz at -2V for 1550nm. In addition, a responsivity of 0.89 A/W at 1550 nm and dark current of 169 nA were measured from this detector at -2V. A higher responsivity of 1.16 A/W was also measured from a longer Ge waveguide detector (4.4 x 100 mum2), with a corresponding bandwidth of 29.4 GHz at -2V. An open eye diagram at 40 Gb/s is also shown.

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Metadata

Authors
Yin, T., Cohen, R., Morse, M. M., Sarid, G., Chetrit, Y., Rubin, D., & Paniccia, M. J.
Venue
Optics Express
Published
2007
Volume
15
Issue
21
Pages
13965
ISSN
1094-4087 (ISSN-L)
OpenAlex
W1967959950
Cited by
397
References
1
FWCI
42.21
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: 31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. https://app.cochat.ai/papers/10.1364/oe.15.013965
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Yin, T., Cohen, R., Morse, M. M., Sarid, G., Chetrit, Y., Rubin, D., & Paniccia, M. J. (2007). 31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. Optics Express. https://doi.org/10.1364/oe.15.013965

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