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Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator

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Green, William M., Rooks, Michael J., Sekaric, Lidija, Vlasov, Yurii A.·2007·Optics Express

Abstract

Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 mum are presented. These devices exhibit high modulation efficiency, with a V(pi)L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

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Metadata

Authors
Green, W. M., Rooks, M. J., Sekaric, L., & Vlasov, Y. A.
Venue
Optics Express
Published
2007
Volume
15
Issue
25
Pages
17106
ISSN
1094-4087 (ISSN-L)
OpenAlex
W2060508161
Cited by
741
References
0
FWCI
61.74
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator. https://app.cochat.ai/papers/10.1364/oe.15.017106
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Green, W. M., Rooks, M. J., Sekaric, L., & Vlasov, Y. A. (2007). Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator. Optics Express. https://doi.org/10.1364/oe.15.017106

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