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Cited by 1,521

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2

Open access
Tonndorf, Philipp, Schmidt, Robert, Böttger, Philipp, Zhang, Xiao, Börner, Janna, Liebig, Andreas, Albrecht, Manfred, Kloc, Christian, Gordan, Ovidiu, Zahn, Dietrich R. T., Michaelis de Vasconcellos, Steffen, Bratschitsch, Rudolf·2013·Optics Express

Abstract

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

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Crossref · 10.1364/oe.21.004908

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Metadata

Authors
Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., Albrecht, M., Kloc, C., Gordan, O., Zahn, D. R. T., Michaelis de Vasconcellos, S., & Bratschitsch, R.
Venue
Optics Express
Published
2013-02-20
Volume
21
Issue
4
Pages
4908
ISSN
1094-4087 (ISSN-L)
OpenAlex
W1999476436
Cited by
1,521
References
2
FWCI
47.66
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2. https://app.cochat.ai/papers/10.1364/oe.21.004908
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Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., Albrecht, M., Kloc, C., Gordan, O., Zahn, D. R. T., Michaelis de Vasconcellos, S., & Bratschitsch, R. (2013). Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2. Optics Express. https://doi.org/10.1364/oe.21.004908

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