Dual slot-mode NOEM phase shifter
Open accessAbstract
Photonic system component counts are increasing rapidly, particularly in CMOS-compatible silicon photonics processes. Large numbers of cascaded active photonic devices are difficult to implement when accounting for constraints on area, power dissipation, and response time. Plasma dispersion and the thermo-optic effect, both available in CMOS-compatible silicon processes, address a subset of these criteria. With the addition of a few back-end-of-line etch processing steps, silicon photonics platforms can support nano-opto-electro-mechanical (NOEM) phase shifters. Realizing NOEM phase shifters that operate at CMOS-compatible voltages (≤ 1.2 V) and with low insertion loss remains a challenge. Here, we introduce a novel NOEM phase shifter fabricated alongside 90 nanometer transistors that imparts 5.63 radians phase shift at 1.08 volts bias over an actuation length of 25 μ m with an insertion loss of less than 0.04 dB and 3 dB bandwidth of 0.26 MHz.
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Compact length, <1 V drive voltage, low power, and negligible IL make NOEMS phase shifters an appealing choice for the next-generation phase shifter technology in silicon photonics.
“Compact length, <1 V drive voltage, low power, and negligible IL87 make NOEMS phase shifters an appealing choice for the next-generation phase shifter technology in silicon photonics.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [87]
A promising phase shifting mechanism in NOEMS uses the applied voltage to mechanically move the waveguide structure, changing the optical mode field distribution and hence the effective refractive index.
“A promising phase shifting mechanism in NOEMS uses the applied voltage to mechanically move the waveguide structure, changing the optical mode field distribution and hence the effective refractive index87.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [87]
A dual slot structure can be used where the dual slots (actuation regions) within a p-i-n junction act as capacitors that get charged or discharged with the applied voltage without drawing significant current, at speeds comparable to metal heaters but without the thermal crosstalk.
“A dual slot structure can be used87, where the dual slots (actuation regions) within a p-i-n junction act as capacitors that get charged or discharged with the applied voltage without drawing significant current, at speeds comparable to metal heaters but without the thermal crosstalk.”
From Roadmapping the next generation of silicon photonics (2024) · cites this paper as [87]
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References 25 · Cited by 44
- Authors
- Baghdadi, R., Gould, M., Gupta, S., Tymchenko, M., Bunandar, D., Ramey, C., & Harris, N. C.
- Affiliations
- Lightmatter (United States) (US)
- Venue
- Optics Express
- Publisher
- Optica Publishing Group
- Published
- 2021-06-04
- Volume
- 29
- Issue
- 12
- Pages
- 19113
- ISSN
- 1094-4087 (ISSN-L)
- OpenAlex
- W3163879263
- Cited by
- 44
- References
- 25
- Citations by year
- 2026: 5 · 2025: 5 · 2024: 12 · 2023: 10 · 2022: 10 · 2021: 2
- FWCI
- 2.50
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- Optics Express (publishedVersion)
- PubMed (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced MEMS and NEMS Technologies
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Mechanical and Optical Resonators
- Keywords
- CMOS-compatible silicon photonics, thermo-optic effect, plasma dispersion, insertion loss, low-voltage actuation, MEMS actuation
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