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Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
Open accessAbstract
We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Gamma valley. Room-temperature EL is observed at the direct gap energy from a Ge/Si p-i-n diode exhibiting the same characteristics of the direct gap photoluminescence of Ge. The integral direct gap EL intensity increases superlinearly with electrical current owing to an indirect valley filling effect. These results indicate a promising future of tensile-strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si.
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Jalali, B., & Fathpour, S. (2006) · Journal of Lightwave Technology · doi:10.1109/jlt.2006.885782 · Cited by 1,423
Cited by
Recent progress in lasers on silicon
Liang, D., & Bowers, J. E. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.167 · Cited by 1,122
The Emergence of Silicon Photonics as a Flexible Technology Platform
Chen, X., Milosevic, M. M., Stankovic, S., Reynolds, S., Bucio, T. D., Li, K., Thomson, D. J., Gardes, F., & Reed, G. T. (2018) · Proceedings of the IEEE · doi:10.1109/jproc.2018.2854372 · Cited by 247
Metadata
- Authors
- Sun, X., Liu, J., Kimerling, L. C., & Michel, J.
- Venue
- Optics Letters
- Publisher
- Optica Publishing Group
- Published
- 2009-04-07
- Volume
- 34
- Issue
- 8
- Pages
- 1198
- ISSN
- 0146-9592 (ISSN-L)
- 1539-4794
- OpenAlex
- W2114990901
- Cited by
- 241
- References
- 1
- FWCI
- 25.08
- Type
- journal article
- Language
- en
- Open access
- green
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- CoChat. (2026). Citation check: Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. https://app.cochat.ai/papers/10.1364/ol.34.001198
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- Sun, X., Liu, J., Kimerling, L. C., & Michel, J. (2009). Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. Optics Letters. https://doi.org/10.1364/ol.34.001198
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