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Temperature Analysis of Parallel-Connected IGBTs under PWM Operating Conditions Using a Physics Model

Horiguchi, Takeshi, Tsukamoto, Kohei, Tominaga, Shinji, Nishimura, Tadashi, Fujita, Hideaki, Akagi, Hirofumi, Kinouchi, Shin-ichi, Oi, Takeshi, Koyama, Masato·2014·IEEJ Transactions on Industry Applications

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Cited by 2

Research works printed but not linked: 19

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  2. (2) Ph. Leturcq, O. Berraies, and J.-L. Massol: “Implementation and Validation of a New Diode Model for Circuit Simulation”, IEEE PESC'96 Rec., Vol. 1, pp. 35-143 (1996-6) · DOI
  3. (3) P. Gillet, M. A. Kallala, J.-L. Massol, and Ph. Leturcq: “Analog Solution of the Ambipopolar Diffusion Equations”, C. R. Acad Sci. Paris, t. 321, Série II b, pp. 53-59 (1995)
  4. (4) Ph. Leturcq, J.-L. Debrie, and O. Berraies: “A Distributed Model of IGBTs for Circuit Simulation”, 7th European Conference on Power Electronics, Vol. 1, pp. 494-501 (1997-9)
  5. (5) L. Lu, S. G. Pytel, E. Santi, A. T. Bryant, J. L. Hudgins, and P. R. Palmer: “Physical Modeling of Forward Conduction in IGBTs and Diodes”, IEEE IAS Annual Meeting, Vol. 4, pp. 2635-2642 (2005-10) · DOI
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  8. (8) A. R. Hefner, Jr.: “A Dynamic Electro-Thermal Model for the IGBT”, IEEE Trans. Industry Appl., Vol. 30, No. 2, pp. 394-405 (1994)
  9. (9) H. A. Mantooth and A. R. Hefner, Jr.: “Electrothermal Simulation of an IGBT PWM Inverter”, IEEE Trans. Power Electron., Vol. 12, No. 3, pp. 474-484 (1997)
  10. (10) M. Ciappa, W. Fichtner, T. Kojima, Y. Yamada, and Y. Nishibe: “Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid ElectricVehicles”, Microelectronics Reliability, Vol. 45, pp. 1694-1699 (2005)
  11. (11) A. R. Hefner, and D. L. Blackburn: “An Analytical Model for the Steady-State and Transient Characterization of the Power Insulated-Gate Bipolar Transistor', Solid State Electron., Vol. 31, No. 10, pp. 1513-1532, 1988.
  12. (12) M. Harada, T. Minato, T. Takahashi, H. Nishihara, K. Inoue, and I. Takata: “600V Trench IGBT in comparison with Planer IGBT—An Evaluation of the Limit of IGBT Performance—”, Proceedings of the 6th International Symposium on Power Semiconductor Devices and ICs, pp. 411-416, 1994. · DOI
  13. (13) P. M. Igic, P. A. Mawby, M. S. Towers, W. Jamal, and S. Batcup: “Investigation of the Power Dissipation During IGBT Turn-Off Using a new Physics-Based IGBT Compact Model”, Microelectronics Reliability, Vol. 42, pp. 1045-1052 (2002)
  14. (14) A. R. Hefner, and D. M. Diebolt: “An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator”, IEEE Trans. Power Electron., Vol. 9, No. 5, pp. 532-542 (1994)
  15. (15) P. R. Palmer, J. C. Joyce, P. Y. Eng, J. L. Hudgins, E. Santi, and R. Dougal: “Circuit Simulator Models for the Diode and IGBT with full temperature dependent features”, IEEE PESC'01 Rec., Vol. 4, pp. 2171-2177 (2001)
  16. (16) P. R. Palmer, E. Santi, J. L. Hudgins, X. Kang, J. C. Joyce, and P. Y. Eng: “Circuit Simulator Models for the Diode and IGBT With Full Temperature Dependent Features”, IEEE Trans. Power Electron., Vol. 18, No. 5, pp. 1220-1229 (2003)
  17. (17) S. Tominaga, T. Jimichi, H. Urushibata, H. Fujita, H. Akagi, S. Kinouchi, and T. Oi: “Modeling of Power MOSFETs With Focus on Voltage Dependency of Terminal Capacitances”, 2009 National Convention Record, IEEJ, Vol. 4, pp. 242-243 (2009-3) (in Japanese)
  18. (18) X. Kang, A. Caiafa, E. Santi, J. L. Hudgins, and P. R. Palmer: “Parameter Extraction for a Physics-Based Circuit Simulator IGBT Model”, IEEE Applied Power Electronics Conference and Exposition, Vol. 2, pp. 946-952 (2003-2) · DOI
  19. (19) A. T. Bryant, L. Lu, E. Santi, P. R. Palmer, and J. L. Hudgins: “Two Step Parameter Extraction Procedure With Formal Optimazation for Physics-Based Circuit Simulator IGBT and p-i-n Diode Models”, IEEE Trans. Power Electron., Vol. 21, No. 6, pp. 295-309 (2006-3) · DOI

Metadata

Authors
Horiguchi, T., Tsukamoto, K., Tominaga, S., Nishimura, T., Fujita, H., Akagi, H., Kinouchi, S.-I., Oi, T., & Koyama, M.
Venue
IEEJ Transactions on Industry Applications
Published
2014
Volume
134
Issue
5
Pages
486-495
ISSN
  • 0913-6339
  • 1348-8163
Cited by
2
Language
en

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CoChat. (2026). Citation check: Temperature Analysis of Parallel-Connected IGBTs under PWM Operating Conditions Using a Physics Model. https://app.cochat.ai/papers/10.1541/ieejias.134.486
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Horiguchi, T., Tsukamoto, K., Tominaga, S., Nishimura, T., Fujita, H., Akagi, H., Kinouchi, S.-I., Oi, T., & Koyama, M. (2014). Temperature Analysis of Parallel-Connected IGBTs under PWM Operating Conditions Using a Physics Model. IEEJ Transactions on Industry Applications. https://doi.org/10.1541/ieejias.134.486

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