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The radiation-induced crystalline-to-amorphous transition in zircon

Weber, William J., Ewing, Rodney C., Wang, Lu-Min·1994·Journal of Materials Research

Abstract

A comprehensive understanding of radiation effects in zircon, ZrSiO 4, over a broad range of time scales (0.5 h to 570 million years) has been obtained by a study of natural zircon, Pu-doped zircon, and ion-beam irradiated zircon. Radiation damage in zircon results in the simultaneous accumulation of both point defects and amorphous regions. The amorphization process is consistent with models based on the multiple overlap of particle tracks, suggesting that amorphization occurs as a result of a critical defect concentration. The amorphization dose increases with temperature in two stages (below 300 K and above 473 K) and is nearly independent of the damage source (α-decay events or heavy-ion beams) at 300 K. Recrystallization of completely amorphous zircon occurs above 1300 K and is a two-step process that involves the initial formation of pseudo-cubic ZrO 2.

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Metadata

Authors
Weber, W. J., Ewing, R. C., & Wang, L.-M.
Venue
Journal of Materials Research
Published
1994-03
Volume
9
Issue
3
Pages
688-698
ISSN
  • 0884-1616 (ISSN-L)
  • 0884-2914
  • 2044-5326
OpenAlex
W2128394018
Cited by
378
References
0
FWCI
15.11
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: The radiation-induced crystalline-to-amorphous transition in zircon. https://app.cochat.ai/papers/10.1557/jmr.1994.0688
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Weber, W. J., Ewing, R. C., & Wang, L.-M. (1994). The radiation-induced crystalline-to-amorphous transition in zircon. Journal of Materials Research. https://doi.org/10.1557/jmr.1994.0688

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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