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Cited by 17

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Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency

Kizilyalli, Isik C., Carlson, Eric P., Cunningham, Daniel W., Manser, Joseph S., Xu, Yanzhi Ann, Liu, Alan Y.·2018
DOI 10.2172/1464211
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Research works printed but not linked: 11

  1. E. Zanoni, M. Meneghini, A. Chini, D. Marcon, and G. Meneghesso, "AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3119-3131, Nov. 2013, DOI: 10.1109/TED.2013.2271954. · DOI
  2. I. C. Kizilyalli, A. P. Edwards, H. Nie, D. Disney, and D. Bour, "High voltage vertical GaN p-n diodes with avalanche capability", IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3067-3070, 2013, DOI: 10.1109/TED.2013.2266664 · DOI
  3. K. Nomoto, B.Song, Z. Hu, M. Zhu, M. Qi, N. Kaneda, T. Mishima, T. Nakamura, D. Jena, and H.G. Xing, "1.7-kV and 0.55-mΩ⋅cm 2 GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability", IEEE Electron Device Letters, vol. 37, no. 2, pp 161-164, 2016, DOI: 10.1109/LED.2015.2506638 · DOI
  4. O.Aktas, and I. Kizilyalli, "Avalanche capability of vertical GaN pn junctions on bulk GaN substrates." IEEE Electron Device Letters, vol. 36, no. 9, pp 890-892, 2015, DOI: 10.1109/LED.2015.2456914 · DOI
  5. C. Gupta, C. Lund, S. Chan, A. Agarwal, J. Liu, Y. Enatsu, S. Keller, and U. Mishra, "In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates" IEEE Electron Device Letters, vol: 38, no. 3, pp. 353-355, 2017, DOI: 10.1109/ LED.2017.2649599 · DOI
  6. M. Sun, Y. Zhang, S. Bedell, J. Barth, D. Sadana, K. Shepard, X. Gao and T. Palacios, "Vertical GaN Power Transistors Using Con- trolled Spalling for Substrate Heterogeneity" Presented at 3 rd Annual SWITCHES Review Meeting, Philadelphia, PA, March 2017
  7. R. McCarthy, "High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation Dislocation GaN by Epitaxial Lift- Off" Presented at 3 rd Annual SWITCHES Review Meeting, Philadelphia, PA, March 2017
  8. M. Dutta, F. Koeck, W. Li, R. Nemanich, and S. Chowdhury, "High Voltage Diodes in Diamond Using (100)-and (111)-Substrates", IEEE Electron Device Letters, vol. 38, no. 5, pp. 600-603, 2017, DOI: 10.1109/LED.2017.2681058 · DOI
  9. S. Nicley, S. Zajac, R. Rechenberg, M. Becker, A. Hardy, T. Schuelke, and T. Grotjohn, "Fabrication and characterization of a corner architecture Schottky barrier diode structure" Phys. Status Solidi A, vol: 212, no. 11, pp 2410-2417, 2057, DOI 10.1002/pssa.201532220 · DOI
  10. Office of Energy Efficiency and Renewable Energy, Advanced Manufacturing Office, "Wide Bandgap Semiconductor for Clean Ener- gy Workshop: Summary Report," (Washington, DC: U.S. Department of Energy, 2012)
  11. Office of Energy Efficiency and Renewable Energy, Advanced Manufacturing Office, "Wide Bandgap Semiconductor for Clean Ener- gy Workshop: Summary Report," (Washington, DC: U.S. Department of Energy, 2012)

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Metadata

Authors
Kizilyalli, I. C., Carlson, E. P., Cunningham, D. W., Manser, J. S., Xu, Y. A., & Liu, A. Y.
Publisher
Office of Scientific and Technical Information (OSTI)
Published
2018-03-13
DOI
10.2172/1464211
Cited by
17
References
0

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CoChat. (2026). Citation check: Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency. https://app.cochat.ai/papers/10.2172/1464211
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Kizilyalli, I. C., Carlson, E. P., Cunningham, D. W., Manser, J. S., Xu, Y. A., & Liu, A. Y. (2018). Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency. https://doi.org/10.2172/1464211

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.