The DOI matches its Crossref record.
Mutual influence of quasistatic and dynamic current imbalances of paralleled IGBTs
Abstract
Static and quasistatic current imbalances of paralleled IGBTs and their free-wheeling diodes not only cause unbalanced ON-state losses but can affect current sharing during switching transients. Further, dynamic current imbalances can lead to quasistatic current imbalances. These mutual influences are analysed by TCAD-simulations and measurements of high voltage IGBTs.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Claims other papers make about this one
Each is checked against this paper’s own text: does it say what the citing paper says it does?
In the citing paper
“In the case of turn-on, the current imbalance is reduced for the difference in gate resistors and gate inductances; however, the current imbalance almost remains the same for L E and V G,th ; the current imbalance worsens for the case of L C and C GE .”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [8]
In the citing paper
“The current imbalance worsens in the case of the difference in the emitter inductance condition for the emitter feedback.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [8]
In the citing paper
“The emitter feedback technique can reduce current imbalances for all the test conditions.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [8]
In the citing paper
“The current imbalance is improved for the turn-on condition for all the cases except the difference in the emitter inductance condition.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [8]
In the citing paper
“In the turn-off case, the gate feedback method can reduce current imbalances, except the difference in turn-off delay times due to C GE , and the current imbalance worsens for the case of C GE .”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [8]
1 more claim about this paper
Create a free account to see every claim other papers make about this one.
Citations
Cites
No references could be resolved yet.
Research works printed but not linked: 9
- 10.23919/EPE17ECCEEurope.2017.8099203 · DOI · Paper page
- 10.1109/EPE.2016.7695365 · DOI
- schrader, 0, Dynamic Current Sharing and Gate Feedback During Turn-OFF of Paralleled IGBTs, Procedings of PCIM Europe 2018 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management
- weigel, 0, Paralleling of High Power Dual Modules: Standard Building Block Design for Evaluation of Module Related Current Mismatch, 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
- wissen, 0, Interaction of inverter performance and selection criteria for paralleled modules, Procedings of PCIM Europe 2019 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management
- schrader, 0, Influences of gate-circuit and parasitic inductances on turn-OFF current imbalances of paralleled IGBTs due to differences in their switching behaviour, 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
- hofer-noser, 1997, Parallelschaltung von Leistungshalbleitern mit Steuerseitig Geregelter Stromverteilung
- werner, 0, Potential of passive feedbacks to reduce dynamic current imbal-ances of paralleled IGBTs, Procedings of PCIM Europe 2019 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management
- 10.1109/28.126748 · DOI
Cited by
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
Metadata
- Authors
- Werner, R., da Cunha, J., & Eckel, H.-G.
- Venue
- 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
- Publisher
- IEEE
- Published
- 2019-09
- Pages
- P.1-P.8
- Cited by
- 4
- References
- 0
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
