The DOI matches its Crossref record.
Paralleling high power dual modules: A challenge for application engineers and power device manufacturers
Abstract
This paper discusses the challenges of paralleling dual modules with special focus on the currently introduced dual modules like LinPak, nHPD2, XHP, LV/HV100, etc. Compared with IHM/IHV Modules 3 to 4 times as many modules have to be paralleled to achieve the same output power. Therefore the parallel connection will play a major role in designing high power converters, used e.g. in traction applications. This paper explains the reasons of current mismatch in parallel connection of IGBT modules and gives suggestions how to minimize current imbalance.
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In the citing paper
“The device having higher di/dt will have an overshoot in current during turn-on, and during turn-off the IGBT having higher dv/dt reaches the dc-link voltage earlier than in the counterpart IGBT, thus leading to the high current overshoot in the counterpart IGBT.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [25]
In the citing paper
“This demonstrates that a single driver/common emitter has almost the same performance as individual gate driving with an auxiliary common emitter and individual gate driving with independent driving, which lead to static current unbalance.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [25]
In the citing paper
“This demonstrates that a single driver/common emitter has almost the same performance as individual gate driving with an auxiliary common emitter and individual gate driving with independent driving, which lead to static current unbalance.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [25]
Citations
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Research works printed but not linked: 19
- 10.1109/EPE.2016.7695365 · DOI
- 10.1109/TIA.2014.2330075 · DOI · Paper page
- 2013, ABB Paralleling of IGBT modules ApplicationNote 5SYA 2098 25082013
- bayerer, 2010, Power Circuit Design for Clean Switching; Transactions of, 6th International Conference on Integrated Power Electronics Systems
- wissen, 0, Effects of influencing the individual leg inductance in case of paralleling modules on basis of XHPTM 3 and EconoDUALTM, PCIM Europe 2017 Nuremberg
- juergen, 2012, Effect of the miller-capacitance during switching transients of IGBT and MOSFET, Proc of 15th Inter Power Electronics and Motion Control Conf
- 10.1109/EPE.2013.6631771 · DOI
- thalheim, 2010, Easy Parallel Connection of IGBT Modules at the Next Scale Level Bodo's Power Systems
- bortis, 0, Double-stage Gate Drive Circuit for Parallel Connected IGBT Modules; Dielectrics and Electrical Insulation, IEEE Transactions on, 1020
- 10.1109/EPE.2014.6910897 · DOI
- 2014, Hitachi HITACHI introduces the next High Power Density Dual-nHPD2
- schnell, 2016, Linpak The new Standard Phase Leg Module with Exceptional Low Inductance Bodo's Power Systems
- buchholz, 2015, Electrical performance of a low inductive 3 3kV half bridge IGBT module PCIM Europe 2015, 19
- schuetze, 2015, Boost your System! Defining the Future of IGBT High Power Modules Bodo's Power Systems
- 2016, Infineon Technology AG; Product Brief: XHP™3, Flexible High Power Platform; Order Number, B133–10129-V2-7600-EU-EC-P Neubiberg
- 2014, Mitsubishi Mitsubishi Electric to Develop High-power Semiconductor Modules Featuring Standardized Package for Industrial Applications
- 2014, New IGBT open standard medium power phase-leg module featuring exceptional low inductance
- bayerer, 2016, Parasitic inductance hindering utilization of power devices; Transactions of, International Conference on Integrated Power Electronics Systems
- schlapbach, 2010, Dynamic Paralleling Problems in IGBT Module Construction and Application; Transactions of, 6th International Conference on Integrated Power Electronics Systems
Cited by
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
Burkart, R. M., Bahmani, A., Kieferndorf, F., Grecki, F., Park, K.-B., & Canales, F. (2019) · 2019 20th International Symposium on Power Electronics (Ee) · doi:10.1109/pee.2019.8923363 · Cited by 7
Metadata
- Authors
- Weigel, J., Boehmer, J., Nagel, A., & Kleffel, R.
- Venue
- 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
- Publisher
- IEEE
- Published
- 2017-09
- Pages
- P.1-P.10
- Cited by
- 14
- References
- 0
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
