CoChat
Sign Up
Cited by 79Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices

The DOI matches its Crossref record.

Non-Volatile RRAM Embedded into 22FFL FinFET Technology

Golonzka, O., Arslan, U., Bai, P., Bohr, M., Baykan, O., Chang, Y., Chaudhari, A., Chen, A., Clarke, J., Connor, C., Das, N., English, C., Ghani, T., Hamzaoglu, F., Hentges, P., Jain, P., Jezewski, C., Karpov, I., Kothari, H., Kotlyar, R., Lin, B., Metz, M., Odonnell, J., Ouellette, D., Park, J., Pirkle, A., Quintero, P., Seghete, D., Sekhar, M., Gupta, A. Sen, Seth, M., Strutt, N., Wiegand, C., Yoo, H. J., Fischer, K.·2019·2019 Symposium on VLSI Technology
DOI 10.23919/vlsit.2019.8776570
Open this paper in CoChat — free account

Abstract

This paper presents key specifications of RRAM-based nonvolatile memory embedded into Intel 22FFL FinFET Technology. 22FFL is a high performance, ultra low power technology developed for mobile and RF applications providing extensive high voltage and analog support and high design flexibility combined with low manufacturing costs [1]. Embedded RRAM technology presented in this paper achieves 104cycle endurance combined with 85°C 10-year retention and high die yield. Technology data retention, endurance and yield are demonstrated on 7.2Mbit arrays. We describe device characteristics, bit cell integration into the logic flow, as well as key considerations for achieving high endurance and retention properties.

Overview

Integrity signals

Registry

Crossref · 10.23919/vlsit.2019.8776570

Cites

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

We couldn’t retrieve this paper’s full text, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Citations

Cites

No references could be resolved yet.

Research works printed but not linked: 6

  1. lee, 2017, A 1. 4Mb 40-nm embedded ReRAM macro with 0. 07um2 bit cell, 2. 7mA/100MHz low-power read and hybrid write verify for high endurance application, IEEE Asian Solid-State Circuits Conf, 9
  2. 10.1109/TED.2016.2639283 · DOI
  3. jain, 2019, A 3. 6Mb 10. 1Mb/mm2 embedded non-volatile ReRAM macro in 22nm FinFET technology with adaptive forming/set/reset schemes yielding down to 0. 5V with sensing time of 5ns at 0. 7V, ISSCC Tech Dig
  4. 10.1109/IEDM.2018.8614620 · DOI
  5. 10.1109/IMW.2018.8388846 · DOI
  6. 10.1109/IEDM.2017.8268475 · DOI

Cited by

Sorted by citations

See all 79

Metadata

Authors
Golonzka, O., Arslan, U., Bai, P., Bohr, M., Baykan, O., Chang, Y., Chaudhari, A., Chen, A., Clarke, J., Connor, C., Das, N., English, C., Ghani, T., Hamzaoglu, F., Hentges, P., Jain, P., Jezewski, C., Karpov, I., Kothari, H., Kotlyar, R., Lin, B., Metz, M., Odonnell, J., Ouellette, D., Park, J., Pirkle, A., Quintero, P., Seghete, D., Sekhar, M., Gupta, A. S., Seth, M., Strutt, N., Wiegand, C., Yoo, H. J., & Fischer, K.
Affiliations
Intel (United States) (US)
ORCID
Venue
2019 Symposium on VLSI Technology
Publisher
IEEE
Published
2019-06
Pages
T230-T231
DOI
10.23919/vlsit.2019.8776570
OpenAlex
W2965096498
Cited by
79
References
0
Citations by year
2026: 6 · 2025: 10 · 2024: 13 · 2023: 11 · 2022: 16 · 2021: 11 · 2020: 11 · 2019: 1
FWCI
15.52
Type
conference paper
Language
en
Open access
closed
Locations
Symposium on VLSI Technology (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
resistive random access memory, embedded non-volatile memory, memory endurance, data retention, die yield

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

How to cite

Cite CoChat for the checks on this page, and the paper for its own findings.

This page
CoChat. (2026). Citation check: Non-Volatile RRAM Embedded into 22FFL FinFET Technology. https://app.cochat.ai/papers/10.23919/vlsit.2019.8776570
The paper
Golonzka, O., Arslan, U., Bai, P., Bohr, M., Baykan, O., Chang, Y., Chaudhari, A., Chen, A., Clarke, J., Connor, C., Das, N., English, C., Ghani, T., Hamzaoglu, F., Hentges, P., Jain, P., Jezewski, C., Karpov, I., Kothari, H., . . . Fischer, K. (2019). Non-Volatile RRAM Embedded into 22FFL FinFET Technology. 2019 Symposium on VLSI Technology. https://doi.org/10.23919/vlsit.2019.8776570