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Optimization of a Gate Distribution Layout to Compensate the Current Imbalance Generated by the 3D Geometry of a Railway Inverter
Abstract
The impact of the stray inductances originated from interconnects in power electronics becomes crucial with the next generation of SiC devices. This paper shows that the existing layout of a railway inverter, operating with Si IGBTs already exhibits a dynamic current imbalance between paralleled modules. This will not allow using this geometry with SiC MOSFETs. A complete investigation of the electromagnetic origin of this issue has been performed. A generic circuit model has been proposed to establish a cabling rule to design a Gate Distribution Printed Circuit Board (PCB) in such a way that it compensates the power dissymmetry. An optimization strategy has been used to obtain a new geometry of this PCB, which has been validated with a time domain simulation.
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Cited by 1
Research works printed but not linked: 20
- Rabkowski, 2012, Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated, IEEE Ind. Electron. Mag., 6, 17, 10.1109/MIE.2012.2193291 · DOI · Paper page
- Seal, S., and Mantooth, H.A. (2017). High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions. Energies, 10. · DOI
- Schanen, J., and Jeannin, P. (2018, January 20–22). Integration solutions for clean and safe switching of high speed devices. Proceedings of the CIPS 2018 10th International Conference on Integrated Power Electronics Systems, Stuttgart, Germany.
- Hatanaka, A., Kageyama, H., and Masuda, T. (2015, January 18–22). A 160-kW high-efficiency photovoltaic inverter with paralleled SiC-MOSFET modules for large-scale solar power. Proceedings of the 2015 IEEE International Telecommunications Energy Conference (INTELEC), Osaka, Japan. · DOI · Paper page
- Schrader, R., Cordt, D., Münster, P., and Eckel, H. (2018, January 17–21). Influences of Gate-Circuit and Parasitic Inductances on Turn-Off Current Imbalances of Paralleled IGBTs Due to Differences in Their Switching Behaviour. Proceedings of the 2018 20th European Conference on Power Electronics and Applications (EPE’18 ECCE Europe), Riga, Latvia.
- Jeannin, 2002, Original cabling conditions to insure balanced current during switching transitions between paralleled semiconductors, IEEE Trans. Ind. Appl., 38, 181, 10.1109/28.980374 · DOI · Paper page
- Zhang, Y., Zang, Z., Hu, B., Alsaif, F., Alkhalid, K., Li, X., and Wang, J. (2020, January 15–20). Current Sharing Analysis of SiC Power Modules in Parallel Operation. Proceedings of the2020 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA. · DOI · Paper page
- Wissen, M., Domes, D., Brekel, W., and Yilmaz, K. (2018, January 20–22). How asymmetric busbar design causes symmetric switching behavior of paralleled IGBT modules. Proceedings of the CIPS 2018, 10th International Conference on Integrated Power Electronics Systems, Stuttgart, Germany.
- Mainali, K., Wang, R., Sabate, J., and Klopman, S. (October, January 29). Current Sharing and Overvoltage Issues of Paralleled SiC MOSFET Modules. Proceedings of the 2019 IEEE Energy Conversion Congress and Exposition (ECCE), Baltimore, MD, USA. · DOI
- Li, 2018, Influence of Paralleling Dies and Paralleling Half-Bridges on Transient Current Distribution in Multichip Power Modules, IEEE Trans. Power Electron., 33, 6483, 10.1109/TPEL.2018.2797326 · DOI
- Bęczkowski, S., Jørgensen, A.B., Li, H., Uhrenfeldt, C., Dai, X., and Munk-Nielsen, S. (2017, January 11–14). Switching current imbalance mitigation in power modules with parallel connected SiC MOSFETs. Proceedings of the 2017 19th European Conference on Power Electronics and Applications (EPE’17 ECCE Europe, Warsaw, Poland. · DOI
- Li, 2016, A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules, IEEE Trans. Power Electron., 31, 8042, 10.1109/TPEL.2016.2562030 · DOI
- Li, H., Munk-Nielsen, S., Bęczkowski, S., Wang, X., and Eni, E. (2016, January 21–24). Effects of auxiliary source connections in multichip power module. Proceedings of the 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA. · DOI
- Martin, 2006, Gate Circuit Layout Optimization of Power Module Regarding Transient Current Imbalance, IEEE Trans. Power Electron., 21, 1176, 10.1109/TPEL.2006.880356 · DOI
- Tang, 2017, Dynamic Electrothermal Model of Paralleled IGBT Modules with Unbalanced Stray Parameters, IEEE Trans. Power Electron., 32, 1385, 10.1109/TPEL.2016.2542198 · DOI · Paper page
- Zeng, 2019, Layout-Dominated Dynamic Current Imbalance in Multichip Power Module: Mechanism Modeling and Comparative Evaluation, IEEE Trans. Power Electron., 34, 11199, 10.1109/TPEL.2019.2900497 · DOI · Paper page
- Ruehli, 1974, Equivalent Circuit Models for Three-Dimensional Multiconductor Systems, IEEE Trans. Microw. Theory Tech., 22, 216, 10.1109/TMTT.1974.1128204 · DOI
- Nunnally, 1975, Differential Measurement of Fast Energy Discharge Capacitor, Inductance, and Resistance, IEEE Trans. Instrum. Meas., 24, 112, 10.1109/TIM.1975.4314389 · DOI
- Deb, 2002, A fast and elitist multiobjective genetic algorithm: NSGA-II, IEEE Trans. Evol. Comput., 6, 182, 10.1109/4235.996017 · DOI · Paper page
- Brooks, D. (2004). Signal Integrity Issues and Printed Circuit Board Design, Prentice Hall.
Metadata
- Authors
- Nakahata-Medrado, A., Schanen, J.-L., Guichon, J.-M., Jeannin, P.-O., Batista, E., & Desportes, G.
- Venue
- Energies
- Publisher
- MDPI AG
- Published
- 2021-03-29
- Volume
- 14
- Issue
- 7
- Pages
- 1891
- ISSN
- 1996-1073
- Cited by
- 1
- Language
- en
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- Nakahata-Medrado, A., Schanen, J.-L., Guichon, J.-M., Jeannin, P.-O., Batista, E., & Desportes, G. (2021). Optimization of a Gate Distribution Layout to Compensate the Current Imbalance Generated by the 3D Geometry of a Railway Inverter. Energies. https://doi.org/10.3390/en14071891
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