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Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Wu, Ruizhu, Mendy, Simon, Agbo, Nereus, Gonzalez, Jose, Jahdi, Saeed, Alatise, Olayiwola·2021·Energies
DOI 10.3390/en14206834
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Abstract

This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and threshold voltages (VTH). The results show that VTH variation is the most critical factor affecting reduced robustness of parallel devices under SC. The SC current conducted per device is shown to increase under parallel connection compared to single device measurements. VTH shift from bias–temperature–instability (BTI) is known to occur in SiC MOSFETs, hence this paper combines BTI and SC tests. The results show that a positive VGS stress on the gate before the SC measurement reduces the peak SC current by a magnitude that is proportional to VGS stress time. Repeating the measurements at elevated temperatures reduces the time dependency of the VTH shift, thereby indicating thermal acceleration of negative charge trapping. VTH recovery is also observed using SC measurements. Similar measurements are performed on Si IGBTs with no observable impact of VGS stress on SC measurements. In conclusion, a test methodology for investigating the impact of BTI on SC characteristics is presented along with key results showing the electrothermal dynamics of parallel devices under SC conditions.

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Crossref · 10.3390/en14206834

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Figures

Figure 1 Experiment setup: ( a ) experimental test -rig circuit diagram for short circuit measurements; ( b ) experimental test -rig picture.
Figure 1 Experiment setup: ( a ) experimental test -rig circuit diagram for short circuit measurements; ( b ) experimental test -rig picture.CC-BY · From the PDF
Image 2
CC-BY · From the PDF
Figure 2 Short circuit measurements for VDS and current in SiC MOSFET with VGS = 15 V, 17 V and 20 V.
Figure 2 Short circuit measurements for VDS and current in SiC MOSFET with VGS = 15 V, 17 V and 20 V.CC-BY · From the PDF
Figure 3 Short circuit measurements for VDS and current in SiC MOSFET with RG = 68, 100 and 120 Ω .
Figure 3 Short circuit measurements for VDS and current in SiC MOSFET with RG = 68, 100 and 120 Ω .CC-BY · From the PDF
Figure 4 Measurements of SC current for a single SiC MOSFET and 2 parallel SiC MOSFETs.
Figure 4 Measurements of SC current for a single SiC MOSFET and 2 parallel SiC MOSFETs.CC-BY · From the PDF
Figure 5 Equivalent circuit of devices under test: ( a ) single device under short circuit; ( b ) parallel -connected devices under short circuit.
Figure 5 Equivalent circuit of devices under test: ( a ) single device under short circuit; ( b ) parallel -connected devices under short circuit.CC-BY · From the PDF
Figure 6 Measurement of the short circuit currents through a 650 V SiC Trench MOSFET under single device short circuit condition and under parallel short circuit condition.
Figure 6 Measurement of the short circuit currents through a 650 V SiC Trench MOSFET under single device short circuit condition and under parallel short circuit condition.CC-BY · From the PDF
Figure 7 Calculated peak SC current for single and parallel MOSFET as a function of total loop inductance.
Figure 7 Calculated peak SC current for single and parallel MOSFET as a function of total loop inductance.CC-BY · From the PDF
Figure 8 VTH distribution on devices from different manufacturers.
Figure 8 VTH distribution on devices from different manufacturers.CC-BY · From the PDF
Figure 9 Measured short circuit current for parallel 1.2 kV/20 A SiC MOSFETs with 25% difference in VTH : ( a ) VGS = 17 V; ( b ) VGS = 15 V.
Figure 9 Measured short circuit current for parallel 1.2 kV/20 A SiC MOSFETs with 25% difference in VTH : ( a ) VGS = 17 V; ( b ) VGS = 15 V.CC-BY · From the PDF
Figure 10 Measured short circuit current for parallel 1.7 kV/5 A SiC MOSFETs with 12.8% difference in VTH .
Figure 10 Measured short circuit current for parallel 1.7 kV/5 A SiC MOSFETs with 12.8% difference in VTH .CC-BY · From the PDF
Figure 11 Measured short circuit current for parallel 1.2 kV/20 A SiC MOSFETs with 100% and 500% difference in Tj.
Figure 11 Measured short circuit current for parallel 1.2 kV/20 A SiC MOSFETs with 100% and 500% difference in Tj.CC-BY · From the PDF
Figure 12 Measured short circuit current for parallel 1.7 kV/5 A SiC MOSFETs with different junc -tion temperatures.
Figure 12 Measured short circuit current for parallel 1.7 kV/5 A SiC MOSFETs with different junc -tion temperatures.CC-BY · From the PDF
Figure 13 Measured short circuit current for parallel 1.2 kV/20 A SiC MOSFETs with 20% and 370% difference in RG.
Figure 13 Measured short circuit current for parallel 1.2 kV/20 A SiC MOSFETs with 20% and 370% difference in RG.CC-BY · From the PDF
Figure 14 Gate pulse signals for the IGBT and DUT for BTI and SC tests.
Figure 14 Gate pulse signals for the IGBT and DUT for BTI and SC tests.CC-BY · From the PDF
Figure 15 Impact of BTI on SC currents for devices: ( a ) 1.2 kV SiC Trench MOSFET; ( b ) 1.2 kV SiC Planar MOSFET; ( c ) 650 V Silicon IGBT; ( d ) SC measurements performed on fully recovered SiC Planar MOSFET showing VTH is restored to its pre -test value.
Figure 15 Impact of BTI on SC currents for devices: ( a ) 1.2 kV SiC Trench MOSFET; ( b ) 1.2 kV SiC Planar MOSFET; ( c ) 650 V Silicon IGBT; ( d ) SC measurements performed on fully recovered SiC Planar MOSFET showing VTH is restored to its pre -test value.CC-BY · From the PDF
Figure 16 Impact of BTI on SC charge for 1.2 kV SiC MOSFETs and Si IGBT at a case temperature of ( a ) 25 °C, and ( b ) 150 °C. Impact of VGS stress time is apparent for SiC MOSFETs.
Figure 16 Impact of BTI on SC charge for 1.2 kV SiC MOSFETs and Si IGBT at a case temperature of ( a ) 25 °C, and ( b ) 150 °C. Impact of VGS stress time is apparent for SiC MOSFETs.CC-BY · From the PDF
Figure 17 Measured SC power and simulated temperature for the parallel 1.2 kV SiC MOSFETs with 25% difference in VTH : ( a ) measured SC power; ( b ) simulated temperature.
Figure 17 Measured SC power and simulated temperature for the parallel 1.2 kV SiC MOSFETs with 25% difference in VTH : ( a ) measured SC power; ( b ) simulated temperature.CC-BY · From the PDF
Figure 18 Simulated SC current and hot -spot temperature using finite elemental model and 2D plot results taken at 4 us into the short circuit for the SiC MOSFET: ( a ) simulated SC current and hot -spot temperature; ( b ) 2D current density plot ( VTH = 4.92 V); ( c ) 2D current density plot ( VTH = 5.12 V); ( d ) 2D temperature contour plot of the SiC MOSFET ( VTH = 4.92 V); ( e ) 2D temperature contour plot of the SiC MOSFET ( VTH = 5.12 V).
Figure 18 Simulated SC current and hot -spot temperature using finite elemental model and 2D plot results taken at 4 us into the short circuit for the SiC MOSFET: ( a ) simulated SC current and hot -spot temperature; ( b ) 2D current density plot ( VTH = 4.92 V); ( c ) 2D current density plot ( VTH = 5.12 V); ( d ) 2D temperature contour plot of the SiC MOSFET ( VTH = 4.92 V); ( e ) 2D temperature contour plot of the SiC MOSFET ( VTH = 5.12 V).CC-BY · From the PDF

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Citations

Cites

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Cited by

Metadata

Authors
Wu, R., Mendy, S., Agbo, N., Gonzalez, J., Jahdi, S., & Alatise, O.
Venue
Energies
Publisher
MDPI AG
Published
2021-10-19
Volume
14
Issue
20
Pages
6834
ISSN
1996-1073
DOI
10.3390/en14206834
Cited by
21
References
1
Language
en
Licence
creativecommons.org/licenses/by/4.0/ (vor)
Funders
Engineering and Physical Sciences Research Council (EP/R004366/1)

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