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Cited by 20Laser-Ablation Synthesis of NanoparticlesGaN-based semiconductor devices and materialsSilicon Nanostructures and Photoluminescence

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PL Tunable GaN Nanoparticles Synthesis through Femtosecond Pulsed Laser Ablation in Different Environments

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Hao, Juan, Xu, Sijia, Gao, Bingrong, Pan, Lingyun·2020·Nanomaterials
DOI 10.3390/nano10030439PMC PMC7153704
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Abstract

The tunable photoluminescence (PL) property is very important for gallium nitride (GaN) nanoparticles in the application of ultraviolet and blue optoelectronic devices, while conventional methods are not so satisfactory that alternative methods for preparing GaN nanoparticles should be studied. In this paper, ultra-small and well dispersed GaN nanoparticles are fabricated through femtosecond pulse laser ablation in air, water and ethanol. For the PL spectra of GaN nanoparticles, there are no shifts in air, red shifts in water and blue shifts in ethanol compared with the intrinsic PL spectra of bulk GaN. The X-ray photoelectron spectroscopy (XPS) results demonstrate that the various PL spectra can be due to the different components inside the GaN nanoparticles, which not only have effect on the PL emissions, but also greatly influence the intensity of PL. This study validates that the ablation environment has a great adjustable effect on the properties of GaN nanoparticles.

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Figure 1 (a) The scheme of fs-PLAL (pulsed laser ablation in liquid); the relative position between the laser’s focus and liquid level in (b) air, (c) water and ethanol.
Figure 1 (a) The scheme of fs-PLAL (pulsed laser ablation in liquid); the relative position between the laser’s focus and liquid level in (b) air, (c) water and ethanol.CC BY · PubMed Central
Figure 2 The transmission electron microscopy (TEM) images of GaN-NPs@air (A,D), GaN-NPs@water (B,E) and GaN-NPs@ethanol (C,F), the corresponding insets are their high-resolution TEM (HRTEM) images, and the corresponding size distribution are displayed in (G–I), respectively.
Figure 2 The transmission electron microscopy (TEM) images of GaN-NPs@air (A,D), GaN-NPs@water (B,E) and GaN-NPs@ethanol (C,F), the corresponding insets are their high-resolution TEM (HRTEM) images, and the corresponding size distribution are displayed in (G–I), respectively.CC BY · PubMed Central
Figure 3 The Raman spectra of GaN-NPs@air, GaN-NPs@water, GaN-NPs@ethanol and GaN film.
Figure 3 The Raman spectra of GaN-NPs@air, GaN-NPs@water, GaN-NPs@ethanol and GaN film.CC BY · PubMed Central
Figure 4 X-ray photoelectron spectroscopy (XPS) spectra of GaN-NPs: (a,b) from N1s and Ga2p of GaN-NPs@air; (c–e) are from N1s, Ga2p and Ga3d in GaN-NPs@ water; (f–h) are respectively from N1s, Ga2p and Ga3d of GaN-NPs@ethanol.
Figure 4 X-ray photoelectron spectroscopy (XPS) spectra of GaN-NPs: (a,b) from N1s and Ga2p of GaN-NPs@air; (c–e) are from N1s, Ga2p and Ga3d in GaN-NPs@ water; (f–h) are respectively from N1s, Ga2p and Ga3d of GaN-NPs@ethanol.CC BY · PubMed Central
Figure 5 The photoluminescence (PL) spectra of (a) GaN-NPs@air, (b) GaN-NPs@water and (c) GaN-NPs@ethanol with different excitation wavelength; (d) the maximum PL emissions and (e) the emissions’ intensity of three kinds of GaN-NPs.
Figure 5 The photoluminescence (PL) spectra of (a) GaN-NPs@air, (b) GaN-NPs@water and (c) GaN-NPs@ethanol with different excitation wavelength; (d) the maximum PL emissions and (e) the emissions’ intensity of three kinds of GaN-NPs.CC BY · PubMed Central
Figure 6 (a) The ultraviolet-visible (UV-Vis) absorption spectra of the three kinds of GaN-NPs; the excitation spectra of (b) GaN-NPs@air, (c) GaN-NPs@water and (d) GaN-NPs@ethanol.
Figure 6 (a) The ultraviolet-visible (UV-Vis) absorption spectra of the three kinds of GaN-NPs; the excitation spectra of (b) GaN-NPs@air, (c) GaN-NPs@water and (d) GaN-NPs@ethanol.CC BY · PubMed Central

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Metadata

Authors
Hao, J., Xu, S., Gao, B., & Pan, L.
Affiliations
  • Jilin University (CN)
  • College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Corresponding author
Pan, Lingyun
ORCID
Pan, Lingyun
Venue
Nanomaterials
Publisher
MDPI AG
Published
2020-02-29
Volume
10
Issue
3
Pages
439
ISSN
2079-4991 (ISSN-L)
DOI
10.3390/nano10030439
PMC
PMC7153704
OpenAlex
W3010605935
Cited by
20
References
1
Citations by year
2026: 3 · 2025: 2 · 2024: 7 · 2023: 4 · 2022: 2 · 2021: 2
FWCI
0.63
Type
journal article
Language
en
Open access
Licence
Locations
  • Nanomaterials (publishedVersion, cc-by)
  • PubMed Central (publishedVersion, cc-by)
  • PubMed (publishedVersion)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
Funders
  • the National Key Research and Development Program of China (2017YFB1104600)
  • National Natural Science Foundation of China (NSFC) (No. 61825502, 61590930, 61827826, 21903035)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Laser-Ablation Synthesis of Nanoparticles
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Materials Science › Materials Chemistry › Silicon Nanostructures and Photoluminescence
Keywords
GaN nanoparticles, tunable photoluminescence, water medium, ethanol medium, red shift, blue shift, nanoparticle composition, ultraviolet optoelectronic devices

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