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Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics
Abstract
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear and nonlinear devices, passive and active devices, and associated applications. For integrated photonics low propagation loss is essential, particularly in nonlinear applications. However, achieving low-loss and high-confinement AlGaAs photonic integrated circuits poses a challenge. Here we show an effective reduction of surface-roughness-induced scattering loss in fully etched high-confinement AlGaAs-on-insulator nanowaveguides, by using a heterogeneous wafer-bonding approach and optimizing fabrication techniques. We demonstrate ultrahigh-quality AlGaAs microring resonators and realize quality factors up to 3.52E6 and finesses as high as 1.4E4. We also show ultra-efficient frequency comb generations in those resonators and achieve record-low threshold powers on the order of ~20 uW and ~120 uW for the resonators with 1 THz and 90 GHz free-spectral ranges, respectively. Our result paves the way for the implementation of AlGaAs as a novel integrated material platform specifically for nonlinear photonics, and opens a new window for chip-based efficiency-demanding practical applications.
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Such high-Q resonators have enabled record-low-threshold frequency-comb generations at 1550 nm under a pump power at the level of tens of microwatts.
“Such high-Q resonators have enabled record-low-threshold frequency-comb generations at 1550 nm [24,25] under a pump power at the level of tens of microwatts”
From Ultrabright Entangled-Photon-Pair Generation from anAlGaAs-On-Insulator Microring Resonator (2021) · cites this paper as [25]
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Research works printed but not linked: 6
- J. S. Aitchison, D. C. Hutchings, J. U. Kang, G. I. Stegeman, and A. Villeneuve, "The nonlinear optical properties of AlGaAs at the half band gap," IEEE J. Quantum Electron. 33, 341-348 (1997)
- L. Chang, W. Xie, H. Shu, Q.-F. Yang, B. Shen, A. Boes, J. D. Peters, W. Jin, C. Xiang, S. Liu, G. Moille, S.-P. Yu, X. Wang, K. Srinivasan, S. B. Papp, K. Vahala, and J. E. Bowers, "Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators," Nat. Commun. 11, 1331 (2020).
- G. Moille, L. Chang, W. Xie, A. Rao, X. Lu, M. Davanco, J. E. Bowers, K. Srinivasanar, "Dissipative Kerr Solitons in a III-V Microresonator," arXiv:2003.06438. · arXiv
- K. Y. Yang, D. Y. Oh, S. H. Lee, Q. F. Yang, X. Yi, B. Q. Shen, H. M. Wang, and K. Vahala, "Bridging ultrahigh-Q devices and photonic circuits," Nat. Photonics 12, 297 (2018).
- B. Stern, X. C. Ji, Y. Okawachi, A. L. Gaeta, and M. Lipson, "Battery-operated integrated frequency comb generator," Nature 562, 401 (2018).
- M. Zhang, B. Buscaino, C. Wang, A. Shams-Ansari, C. Reimer, R. R. Zhu, J. M. Kahn, and M. Loncar, "Broadband electro-optic frequency comb generation in a lithium niobate microring resonator," Nature 568, 373 (2019).
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Ultrabright Entangled-Photon-Pair Generation from anAlGaAs-On-Insulator Microring Resonator
Steiner, T. J., Castro, J. E., Chang, L., Dang, Q., Xie, W., Norman, J., Bowers, J. E., & Moody, G. (2021) · PRX Quantum · doi:10.1103/prxquantum.2.010337 · Cited by 156
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- Authors
- Xie, W., Chang, L., Shu, H., Norman, J. C., Peters, J. D., Wang, X., & Bowers, J. E.
- Venue
- arXiv
- Publisher
- arXiv
- Published
- 2020
- arXiv
- 2004.14537
- References
- 0
- Type
- Preprint
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