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Cited by 302

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer

Minami, Tadatsugu, Nishi, Yuki, Miyata, Toshihiro·2013·Applied Physics Express

Abstract

High-efficiency heterojunction solar cells consisting of a nondoped Ga 2 O 3 thin film as an n-type semiconductor layer and a p-type Cu 2 O sheet as the active layer as well as the substrate, prepared by thermally oxidizing a Cu sheet, are demonstrated. The use of an n-type Ga 2 O 3 thin film can greatly improve the performance of n-Ga 2 O 3 /p-Cu 2 O heterojunction solar cells. The highest efficiency of 5.38% was obtained in an Al-doped ZnO/Ga 2 O 3 /Cu 2 O heterojunction solar cell fabricated with an n-Ga 2 O 3 thin-film layer prepared at room temperature with a thickness of 75 nm by a pulsed laser deposition method.

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Metadata

Authors
Minami, T., Nishi, Y., & Miyata, T.
Venue
Applied Physics Express
Published
2013-04-01
Volume
6
Issue
4
Pages
044101
ISSN
  • 1882-0778 (ISSN-L)
  • 1882-0786
OpenAlex
W2004834671
Cited by
302
References
1
FWCI
12.71
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer. https://app.cochat.ai/papers/10.7567/apex.6.044101
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Minami, T., Nishi, Y., & Miyata, T. (2013). High-Efficiency Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3Thin Film as N-Type Layer. Applied Physics Express. https://doi.org/10.7567/apex.6.044101

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