Low Power and Improved Switching Properties of Selector-Less Ta2O5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Open accessAbstract
The effects of TiN top electrode composition (TiN vs Ti-rich TiN) on the resistive switching characteristics of selector-less TiN/TiO x /Ta 2 O 5/TiN resistive random access memory (ReRAM) are investigated. Ti-rich TiN enables TiO x to have a higher concentration of oxygen vacancy and reduce barrier height between top electrode and TiO x . This leads to higher on/off current ratio and lower operation voltage without degradation of non-linearity which is the important factor for selector-less type ReRAM, compared to the stoichiometric TiN resistor stack. Consequently, it is verified that the switching mechanism is hybrid combination of filament formation and redox reaction in switching operation. This work is applicable to both high density and cost-effective ReRAM.
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References 13 · Cited by 7
Research works printed but not linked: 7
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- Authors
- Kim, B., Kim, W., Kim, H., Jung, K., Park, W., Seo, B., Joo, M., Lee, K., Hong, K., & Park, S.
- Affiliations
- SK Group (United States) (US)
- ORCID
- Hong, Kwon
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2013-03-21
- Volume
- 52
- Issue
- 4S
- Pages
- 04CD05
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W1969148392
- Cited by
- 7
- References
- 13
- Citations by year
- 2024: 1 · 2020: 1 · 2019: 1 · 2017: 2 · 2016: 1 · 2015: 1
- FWCI
- 0.40
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Licence
- Locations
- Japanese Journal of Applied Physics (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
- Keywords
- resistive random access memory, tantalum pentoxide, oxygen vacancies, on/off current ratio, low-voltage operation, filamentation, redox reactions, switching mechanism, low-power memory
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