Kang, Jinfeng

A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling

Yu, S., Gao, B., Fang, Z., Yu, H., Kang, J., & Wong, H.-S. P. (2012) · 2012 International Electron Devices Meeting

Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing

Cited by 213

Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

Gao, B., Bi, Y., Chen, H.-Y., Liu, R., Huang, P., Chen, B., Liu, L., Liu, X., Yu, S., Wong, H.-S. P., et al. (2014) · ACS Nano

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 188

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Deng, Y., Huang, P., Chen, B., Yang, X., Gao, B., Wang, J., Zeng, L., Du, G., Kang, J., & Liu, X. (2013) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 184

HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

Chen, H.-Y., Yu, S., Gao, B., Huang, P., Kang, J., & Wong, H.-S. P. (2012) · 2012 International Electron Devices Meeting

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 144

Design and optimization methodology for 3D RRAM arrays

Deng, Y., Chen, H.-Y., Gao, B., Yu, S., Wu, S.-C., Zhao, L., Chen, B., Jiang, Z., Liu, X., Hou, T.-H., et al. (2013) · 2013 IEEE International Electron Devices Meeting

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 55