Medjdoub, Farid

GaN-based power devices: Physics, reliability, and perspectives

Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 723

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Dogmus, E., Kabouche, R., Lepilliet, S., Linge, A., Zegaoui, M., Ben-Ammar, H., Chauvat, M.-P., Ruterana, P., Gamarra, P., Lacam, C., et al. (2016) · Electronics

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 37

GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal

Abid, I., Canato, E., Meneghini, M., Meneghesso, G., Cheng, K., & Medjdoub, F. (2021) · Applied Physics Express

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 13