GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
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Abstract We report on the demonstration of low trapping effects above 1200 V of GaN-on-silicon transistors using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. Substrate ramp measurements show reduced hysteresis up to 3000 V. It has been found that the LSR approach not only enables the extension operation voltage capabilities of GaN-on-silicon HEMTs with low on-resistance but also allow for the reduction of trapping effects directly affecting their dynamic behavior. This work points out that a large part of the electron trapping under high bias occurs at the AlN nucleation layer and Si substrate interface.
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Local substrate removal or use of a sapphire substrate instead of silicon can improve GaN device robustness against drain-to-substrate breakdown, as demonstrated by Gupta et al. with a 1200 V GaN switch.
“Ways to improve device robustness against this phenomenon is local substrate removal [39] or, at lower cost, the use of sapphire substrate instead of a silicon one, as demonstrated by Gupta et al. [40] with a 1200 V GaN switch.”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [39]
Drain-to-substrate breakdown in GaN-on-Si devices is usually present for voltages well above the rating, not uncommonly above 1000 V.
“Drain-to-substrate breakdown is usually present, in GaN-on-Si devices, for voltages well above the rating, not uncommonly above 1000 V [39].”
From Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives (2024) · cites this paper as [39]
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References 27 · Cited by 13
- Authors
- Abid, I., Canato, E., Meneghini, M., Meneghesso, G., Cheng, K., & Medjdoub, F.
- Affiliations
- Centre National de la Recherche Scientifique (FR)
- University of Padua (IT)
- Venue
- Applied Physics Express
- Publisher
- IOP Publishing
- Published
- 2021-01-29
- Volume
- 14
- Issue
- 3
- Pages
- 036501
- ISSN
- 1882-0778 (ISSN-L)
- 1882-0786
- OpenAlex
- W3122444417
- Cited by
- 13
- References
- 27
- Citations by year
- 2026: 1 · 2024: 3 · 2023: 6 · 2022: 2 · 2021: 1
- FWCI
- 1.26
- Type
- journal article
- Language
- en
- Open access
- hybrid
- doi.org
- Licence
- Locations
- Applied Physics Express (publishedVersion, cc-by)
- HAL (submittedVersion, cc-by)
- Padua Research Archive (University of Padova) (submittedVersion, cc-by)
- Funders
- European Union’s Horizon 2020 (No 720527 (Inrel-NPower))
- French National grant (ANR-17-CE05-00131 BREAKUP)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Keywords
- GaN-on-Si, high electron mobility transistors, current collapse, blocking voltage, AlN nucleation layer, electron trapping, hysteresis, ultra-wide bandgap semiconductors
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