Domeij, M.

A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling

Moens, P., Franchi, J., Lettens, J., Schepper, L. D., Domeij, M., & Allerstam, F. (2020) · 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 38

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Masin, F., De Santi, C., Lettens, J., Franchi, J., Domeij, M., Moens, P., Meneghini, M., Meneghesso, G., & Zanoni, E. (2021) · Journal of Applied Physics

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 29

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study

Moens, P., Geenen, F., De Schepper, L., Cano, J., Lettens, J., Maslougkas, S., Franchi, J., & Domeij, M. (2023) · 2023 IEEE International Reliability Physics Symposium (IRPS)

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 4