Yoon, Kyung Jean

Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

Yoon, J. H., Song, S. J., Yoo, I., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., & Hwang, C. S. (2014) · Advanced Functional Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 277

Nociceptive Memristor

Kim, Y., Kwon, Y. J., Kwon, D. E., Yoon, K. J., Yoon, J. H., Yoo, S., Kim, H. J., Park, T. H., Han, J., Kim, K. M., et al. (2018) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 217

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Yoon, J. H., Kim, K. M., Song, S. J., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., Kwon, Y. J., Shao, X., & Hwang, C. S. (2015) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 175

Extension of Two-Port Sneak Current Cancellation Scheme to 3-D Vertical RRAM Crossbar Array

Bae, W., Yoon, K. J., Hwang, C. S., & Jeong, D.-K. (2017) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 15