Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

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High-Density Crossbar Arrays Based on a Si Memristive System

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Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

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Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

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Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

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Observation of electric-field induced Ni filament channels in polycrystalline NiOx film

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Ion-beam-induced chemical changes in the oxyanions (Moyn-) and oxides (Mox) where M = chromium, molybdenum, tungsten, vanadium, niobium and tantalum

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Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

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A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

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Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications

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32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

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Modeling for bipolar resistive memory switching in transition-metal oxides

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High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

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A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

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Electrically configurable electroforming and bipolar resistive switching in Pt/TiO 2 /Pt structures

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Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

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A study on the capacitance–voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications

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Electron and hole trapping in polycrystalline metal oxide materials

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New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

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Schottky diode with excellent performance for large integration density of crossbar resistive memory

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Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt

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Selective liquid crystal molecule orientation on ion beam irradiated tantalum oxide ultrathin films

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Direct observation of local resistance switching in WO3 films

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An artificial nociceptor based on a diffusive memristor

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All‐Optically Controlled Memristor for Optoelectronic Neuromorphic Computing

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Memristors for Energy‐Efficient New Computing Paradigms

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Prospective of Semiconductor Memory Devices: from Memory System to Materials

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Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

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Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

Jeong, D. S., & Hwang, C. S. (2018) · Advanced Materials · doi:10.1002/adma.201704729 · Cited by 244 · see citing works

Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays

Li, Y., & Ang, K.-W. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202000137 · Cited by 220 · see citing works

Nociceptive Memristor

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Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large‐Scale Circuits

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Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices

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Memristive Crossbar Arrays for Storage and Computing Applications

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Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

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Pt/Ta₂O₅/HfO₂₋<i>_x</i>/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Yoon, J. H., Kim, K. M., Song, S. J., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., Kwon, Y. J., Shao, X., & Hwang, C. S. (2015) · Advanced Materials · doi:10.1002/adma.201501167 · Cited by 175 · see citing works

A Highly Transparent Artificial Photonic Nociceptor

Kumar, M., Kim, H., & Kim, J. (2019) · Advanced Materials · doi:10.1002/adma.201900021 · Cited by 168 · see citing works

Competing memristors for brain-inspired computing

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Roadmap to neuromorphic computing with emerging technologies

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Optically driven intelligent computing with ZnO memristor

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Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway

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Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

Sokolov, A. S., Jeon, Y.-R., Kim, S., Ku, B., Lim, D.-H., Han, H., Chae, M. G., Lee, J., Ha, B. G., & Choi, C. (2017) · Applied Surface Science · doi:10.1016/j.apsusc.2017.11.016 · Cited by 127 · see citing works

A self-rectifying TaOy/nanoporous TaOx memristor synaptic array for learning and energy-efficient neuromorphic systems

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Voltage divider effect for the improvement of variability and endurance of TaOx memristor

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Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films

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Memristive Devices for New Computing Paradigms

Im, I. H., Kim, S. J., & Jang, H. W. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000105 · Cited by 116 · see citing works

Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation

Zhang, X., Xu, L., Zhang, H., Liu, J., Tan, D., Chen, L., Ma, Z., & Li, W. (2020) · Nanoscale Research Letters · doi:10.1186/s11671-019-3229-y · Cited by 107 · see citing works

Bipolar Resistive Switching in TiO 2 Artificial Synapse Mimicking Pavlov’s Associative Learning

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Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

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Vertically Aligned WS 2 Layers for High‐Performing Memristors and Artificial Synapses

Kumar, M., Ban, D., Kim, S. M., Kim, J., & Wong, C. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201900467 · Cited by 100 · see citing works

A Low‐Current and Analog Memristor with Ru as Mobile Species

Yoon, J. H., Zhang, J., Lin, P., Upadhyay, N. K., Yan, P., Liu, Y., Xia, Q., & Yang, J. J. (2020) · Advanced Materials · doi:10.1002/adma.201904599 · Cited by 95 · see citing works

Self‐Rectifying Memristors for Three‐Dimensional In‐Memory Computing

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Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

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What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Yoon, K. J., Kim, Y., & Hwang, C. S. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800914 · Cited by 93 · see citing works

Time-varying data processing with nonvolatile memristor-based temporal kernel

Jang, Y. H., Kim, W., Kim, J., Woo, K. S., Lee, H. J., Jeon, J. W., Shim, S. K., Han, J., & Hwang, C. S. (2021) · Nature Communications · doi:10.1038/s41467-021-25925-5 · Cited by 93 · see citing works

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

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Electronic resistance switching in the Al/TiO x /Al structure for forming-free and area-scalable memory

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Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Abbas, H., Li, J., & Ang, D. S. (2022) · Micromachines · doi:10.3390/mi13050725 · Cited by 87 · see citing works

Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application

Luo, Q., Zhang, X., Hu, Y., Gong, T., Xu, X., Yuan, P., Ma, H., Dong, D., Lv, H., Long, S., et al. (2018) · IEEE Electron Device Letters · doi:10.1109/led.2018.2821162 · Cited by 86 · see citing works

Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing

Ryu, J.-H., & Kim, S. (2020) · Chaos, Solitons &amp; Fractals · doi:10.1016/j.chaos.2020.110236 · Cited by 87 · see citing works

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO 2 /Al/Polyimide Structure

Zhao, J., Zhang, M., Wan, S., Yang, Z., & Hwang, C. S. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b16214 · Cited by 85 · see citing works

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory

Li, X., Yang, J.-G., Ma, H.-P., Liu, Y., Ji, Z., Huang, W., Ou, X., Zhang, D. W., & Lü, H.-L. (2020) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.0c06476 · Cited by 83 · see citing works

Artificial Neural Networks Based on Memristive Devices: From Device to System

Huang, H.-M., Wang, Z., Wang, T., Xiao, Y., & Guo, X. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000149 · Cited by 82 · see citing works

Enhanced resistive switching in all-printed, hybrid and flexible memory device based on perovskite ZnSnO3 via PVOH polymer

Siddiqui, G. U., Rehman, M. M., & Choi, K. H. (2016) · Polymer · doi:10.1016/j.polymer.2016.07.081 · Cited by 74 · see citing works

Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching

Ismail, M., Rahmani, M. K., Khan, S. A., Choi, J., Hussain, F. A., Batool, Z., Rana, A. M., Lee, J., Cho, H., & Kim, S. (2019) · Applied Surface Science · doi:10.1016/j.apsusc.2019.143833 · Cited by 75 · see citing works

Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly

Frascaroli, J., Brivio, S., Lupi, F. F., Seguini, G., Boarino, L., Perego, M., & Spiga, S. (2015) · ACS Nano · doi:10.1021/nn505131b · Cited by 74 · see citing works

Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware

Kim, G., Son, S., Song, H., Jeon, J. B., Lee, J., Cheong, W. H., Choi, S., & Kim, K. M. (2023) · Advanced Science · doi:10.1002/advs.202205654 · Cited by 72 · see citing works

A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks

Wang, W., Wang, R., Shi, T., Wei, J., Cao, R., Zhao, X., Wu, Z., Zhang, X., Lü, J., Xu, H. F., et al. (2019) · IEEE Electron Device Letters · doi:10.1109/led.2019.2929240 · Cited by 72 · see citing works

Tunable stochastic memristors for energy-efficient encryption and computing

Woo, K. S., Han, J., Yi, S., Thomas, L., Park, H., Kumar, S., & Hwang, C. S. (2024) · Nature Communications · doi:10.1038/s41467-024-47488-x · Cited by 71 · see citing works

Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

Ryu, H., & Kim, S. (2020) · Nanomaterials · doi:10.3390/nano10112159 · Cited by 70 · see citing works

Nanoscale memristor devices: materials, fabrication, and artificial intelligence

Yu, Y., Xiao, M. W., Fieser, D., Zhou, W., & Hu, A. (2024) · Journal of Materials Chemistry C · doi:10.1039/d3tc04510b · Cited by 69 · see citing works

Two-Terminal Neuromorphic Devices for Spiking Neural Networks: Neurons, Synapses, and Array Integration

Kim, Y. S., Baek, J. H., Im, I. H., Lee, D. H., Park, M. H., & Jang, H. W. (2024) · ACS Nano · doi:10.1021/acsnano.4c12884 · Cited by 70 · see citing works

Retention enhancement through capacitance-dependent voltage division analysis in 3D stackable TaOx/HfO2-based selectorless memristor

Sung, J. H., Park, J. H., Jeon, D. S., Kim, D., Yu, M. J., Khot, A. C., Dongale, T. D., & Kim, T. G. (2021) · Materials & Design · doi:10.1016/j.matdes.2021.109845 · Cited by 66 · see citing works

Strategic Development of Memristors for Neuromorphic Systems: Low‐Power and Reconfigurable Operation

Lee, J. W., Han, J., Kang, B., Hong, Y. J., Lee, S., & Jeon, I. (2025) · Advanced Materials · doi:10.1002/adma.202413916 · Cited by 69 · see citing works

Defect-Engineered Electroforming-Free Analog HfO_<i>x</i> Memristor and Its Application to the Neural Network

Kim, G. S., Song, H., Lee, Y. K., Kim, J. H., Kim, W., Park, T. H., Kim, H. J., Min Kim, K., & Hwang, C. S. (2019) · ACS Applied Materials &amp; Interfaces · doi:10.1021/acsami.9b16499 · Cited by 64 · see citing works

A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design

Woo, K. S., Wang, Y., Kim, J., Kim, Y., Kwon, Y. J., Yoon, J. H., Kim, W., & Hwang, C. S. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800543 · Cited by 64 · see citing works

MOF‐Based Sustainable Memory Devices

Kulachenkov, N. K., Haar, Q., Shipilovskikh, S. A., Yankin, A. N., Pierson, J. F., Nominé, A., & Milichko, V. A. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202107949 · Cited by 61 · see citing works

Analog Resistive Switching and Synaptic Functions in WOx/TaOx Bilayer through Redox-Induced Trap-Controlled Conduction

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3D resistive RAM cell design for high-density storage class memory—a review

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