Park, Tae Hyung

Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

Yoon, J. H., Song, S. J., Yoo, I., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., & Hwang, C. S. (2014) · Advanced Functional Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

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Nociceptive Memristor

Kim, Y., Kwon, Y. J., Kwon, D. E., Yoon, K. J., Yoon, J. H., Yoo, S., Kim, H. J., Park, T. H., Han, J., Kim, K. M., et al. (2018) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 217

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Yoon, J. H., Kim, K. M., Song, S. J., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., Kwon, Y. J., Shao, X., & Hwang, C. S. (2015) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 175

Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network

Kim, G. S., Song, H., Lee, Y. K., Kim, J. H., Kim, W., Park, T. H., Kim, H. J., Min Kim, K., & Hwang, C. S. (2019) · ACS Applied Materials & Interfaces

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 64