Pan, Feng

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 876

Forming-free and self-rectifying resistive switching of the simple Pt/TaO x /n-Si structure for access device-free high-density memory application

Gao, S., Zeng, F., Li, F., Wang, M., Mao, H., Wang, G., Song, C., & Pan, F. (2015) · Nanoscale

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 113

Antiferromagnetic Inverse Spin Hall Effect

Huang, L., Zhou, Y., Qiu, H., Bai, H., Chen, C., Yu, W., Liao, L., Guo, T., Pan, F., Jin, B., et al. (2022) · Advanced Materials

Magnetic properties of thin filmsAdvanced Condensed Matter Physics

Cited by 42