Forming-free and self-rectifying resistive switching of the simple Pt/TaO x /n-Si structure for access device-free high-density memory application

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080 · see citing works

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228 · see citing works

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Pan, F., Gao, S., Chen, C., Song, C., & Zeng, F. (2014) · Materials Science and Engineering R Reports · doi:10.1016/j.mser.2014.06.002 · Cited by 1,399 · see citing works

Complementary resistive switches for passive nanocrossbar memories

Linn, E., Rosezin, R., Kügeler, C., & Waser, R. M. (2010) · Nature Materials · doi:10.1038/nmat2748 · Cited by 1,274 · see citing works

Emerging memories: resistive switching mechanisms and current status

Jeong, D. S., Thomas, R., Katiyar, R. S., Scott, J. F., Kohlstedt, H., Petraru, A., & Hwang, C. S. (2012) · Reports on Progress in Physics · doi:10.1088/0034-4885/75/7/076502 · Cited by 1,099 · see citing works

Semiconductor devices

Kano, K. (1997) · Cited by 943 · see citing works

Electrochemical metallization memories—fundamentals, applications, prospects

Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254003 · Cited by 921 · see citing works

Sub-nanosecond switching of a tantalum oxide memristor

Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G., & Williams, R. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/48/485203 · Cited by 701 · see citing works

High switching endurance in TaOx memristive devices

Yang, J. J., Zhang, M.-X., Strachan, J. P., Miao, F., Pickett, M. D., Kelley, R. D., Medeiros-Ribeiro, G., & Williams, R. S. (2010) · Applied Physics Letters · doi:10.1063/1.3524521 · Cited by 637 · see citing works

Nanobatteries in redox-based resistive switches require extension of memristor theory

Valov, I., Linn, E., Tappertzhofen, S., Schmelzer, S., van den Hurk, J., Lentz, F., & Waser, R. (2013) · Nature Communications · doi:10.1038/ncomms2784 · Cited by 587 · see citing works

Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Lee, M., Park, Y., Suh, D., Lee, E. ‐., Seo, S., Kim, D. C., Jung, R., Kang, B. S., Ahn, S., Lee, C. B., et al. (2007) · Advanced Materials · doi:10.1002/adma.200700251 · Cited by 435 · see citing works

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

Park, G., Kim, Y. B., Park, S. Y., Li, X. S., Heo, S., Lee, M., Chang, M., Kwon, J., Kim, M., Chung, U., et al. (2013) · Nature Communications · doi:10.1038/ncomms3382 · Cited by 355 · see citing works

Nanoscale resistive switching devices: mechanisms and modeling

Yang, Y., & Lu, W. D. (2013) · Nanoscale · doi:10.1039/c3nr03472k · Cited by 269 · see citing works

Complementary resistive switching in tantalum oxide-based resistive memory devices

Yang, Y., Sheridan, P., & Lu, W. (2012) · Applied Physics Letters · doi:10.1063/1.4719198 · Cited by 238 · see citing works

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Gao, S., Song, C., Chen, C., Zeng, F., & Pan, F. (2012) · The Journal of Physical Chemistry C · doi:10.1021/jp305482c · Cited by 217 · see citing works

AES and XPS study of thin RF-sputtered Ta2O5 layers

Atanassova, E., Dimitrova, T., & Koprinarova, J. B. (1995) · Applied Surface Science · doi:10.1016/0169-4332(94)00538-9 · Cited by 202 · see citing works

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

Kim, K.-H., Hyun Jo, S., Gaba, S., & Lu, W. (2010) · Applied Physics Letters · doi:10.1063/1.3294625 · Cited by 187 · see citing works

Effects of metal electrodes on the resistive memory switching property of NiO thin films

Lee, C. B., Kang, B. S., Benayad, A., Lee, M., Ahn, S., Kim, K. H., Болеславович, С. Г., Park, Y., & Yoo, I. K. (2008) · Applied Physics Letters · doi:10.1063/1.2967194 · Cited by 184 · see citing works

Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch

Tsuruoka, T., Hasegawa, T., Terabe, K., & Aono, M. (2012) · Nanotechnology · doi:10.1088/0957-4484/23/43/435705 · Cited by 181 · see citing works

Phase change materials in non-volatile storage

Ielmini, D., & Lacaita, A. L. (2011) · Materials Today · doi:10.1016/s1369-7021(11)70301-7 · Cited by 180 · see citing works

Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture

Ji, Y., Zeigler, D. F., Lee, D. S., Choi, H., Jen, A. K.-Y., Ko, H. C., & Kim, T.-W. (2013) · Nature Communications · doi:10.1038/ncomms3707 · Cited by 177 · see citing works

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Ahn, S., Lee, M., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D., Kim, D. C., Hur, J. H., et al. (2008) · Advanced Materials · doi:10.1002/adma.200702081 · Cited by 169 · see citing works

High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays

Lee, W., Park, J., Kim, S., Woo, J., Shin, J., Choi, G., Park, S., Lee, D., Cha, E., Lee, B. H., et al. (2012) · ACS Nano · doi:10.1021/nn3028776 · Cited by 152 · see citing works

Random telegraph noise and resistance switching analysis of oxide based resistive memory

Choi, S., Yang, Y., & Lu, W. D. (2013) · Nanoscale · doi:10.1039/c3nr05016e · Cited by 134 · see citing works

Flexible Crossbar‐Structured Resistive Memory Arrays on Plastic Substrates via Inorganic‐Based Laser Lift‐Off

Kim, S., Son, J. H., Lee, S. H., You, B. K., Park, K., Lee, H. K., Byun, M., & Lee, K. J. (2014) · Advanced Materials · doi:10.1002/adma.201402472 · Cited by 133 · see citing works

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Long, S., Lian, X., Cagli, C., Perniola, L., Miranda, E. A., Liu, M., & Suñé, J. (2013) · IEEE Electron Device Letters · doi:10.1109/led.2013.2266332 · Cited by 132 · see citing works

Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

Chen, C., Pan, F., Wang, Z. S., Yang, J., & Zeng, F. (2012) · Journal of Applied Physics · doi:10.1063/1.3672811 · Cited by 130 · see citing works

XPS study of N2 annealing effect on thermal Ta2O5 layers on Si

Atanassova, E., Tyuliev, G. T., Paskaleva, A., Spassov, D., & Kostov, K. (2003) · Applied Surface Science · doi:10.1016/j.apsusc.2003.09.040 · Cited by 121 · see citing works

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

Chen, C., Song, C., Yang, J., Zeng, F., & Pan, F. (2012) · Applied Physics Letters · doi:10.1063/1.4730601 · Cited by 116 · see citing works

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

Long, S., Lian, X., Ye, T., Cagli, C., Perniola, L., Miranda, E. A., Liu, M., & Suñé, J. (2013) · IEEE Electron Device Letters · doi:10.1109/led.2013.2251314 · Cited by 114 · see citing works

One Transistor–One Resistor Devices for Polymer Non‐Volatile Memory Applications

Kim, T., Choi, H., Oh, S., Wang, G., Kim, D., Hwang, H., & Lee, T. (2009) · Advanced Materials · doi:10.1002/adma.200803798 · Cited by 108 · see citing works

Conductance quantization in a Ag filament-based polymer resistive memory

Gao, S., Zeng, F., Chen, C., Tang, G., Lin, Y., Zheng, Z., Song, C., & Pan, F. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/33/335201 · Cited by 102 · see citing works

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

Gao, S., Chen, C., Zhai, Z., Liu, H. Y., Lin, Y., Li, S. Z., Lu, S., Wang, G. Y., Song, C., Zeng, F., et al. (2014) · Applied Physics Letters · doi:10.1063/1.4893277 · Cited by 99 · see citing works

Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device

Zhang, Y., Deng, N., Wu, H., Yu, Z., Zhang, J., & Qian, H. (2014) · Applied Physics Letters · doi:10.1063/1.4893325 · Cited by 98 · see citing works

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

Chen, C., Gao, S., Zeng, F., Tang, G., Li, S. Z., Song, C., Fu, H., & Pan, F. (2013) · Journal of Applied Physics · doi:10.1063/1.4812486 · Cited by 81 · see citing works

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

Tang, G., Zeng, F., Chen, C., Liu, H., Gao, S., Song, C., Lin, Y., Chen, G., & Pan, F. (2012) · Nanoscale · doi:10.1039/c2nr32743k · Cited by 72 · see citing works

Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching

Chen, C., Gao, S., Tang, G., Fu, H., Wang, G., Song, C., Zeng, F., & Pan, F. (2013) · ACS Applied Materials & Interfaces · doi:10.1021/am303128h · Cited by 65 · see citing works

Retention failure analysis of metal-oxide based resistive memory

Choi, S., Lee, J., Kim, S., & Lu, W. D. (2014) · Applied Physics Letters · doi:10.1063/1.4896154 · Cited by 56 · see citing works

Bipolar one diode–one resistor integration for high-density resistive memory applications

Li, Y., Lv, H., Liu, Q., Long, S., Wang, M., Xie, H., Zhang, K., Huo, Z., & Liu, M. (2013) · Nanoscale · doi:10.1039/c3nr33370a · Cited by 54 · see citing works

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

Tran, X. A., Zhu, L.-W., Liu, W. J., Yeo, Y., Nguyen, B.-Y., & Yu, H. Y. (2012) · IEEE Electron Device Letters · doi:10.1109/led.2012.2210855 · Cited by 53 · see citing works

Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

Sun, X., Li, G., Chen, L., Shi, Z., & Zhang, W. (2011) · Nanoscale Research Letters · doi:10.1186/1556-276x-6-599 · Cited by 51 · see citing works

Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism

Yang, Y., Chen, C., Zeng, F., & Pan, F. (2010) · Journal of Applied Physics · doi:10.1063/1.3399152 · Cited by 46 · see citing works

Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2 /W devices

Biju, K. P., Liu, X.-J., Bourim, E. M., Kim, I., Jung, S., Siddik, M., Lee, J., & Hwang, H. (2010) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/43/49/495104 · Cited by 45 · see citing works

Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

Vallée, C., Gonon, P., Jorel, C., & Kamel, F. E. (2010) · Applied Physics Letters · doi:10.1063/1.3447795 · Cited by 45 · see citing works

The evolution of conducting filaments in forming-free resistive switching Pt/TaOx/Pt structures

Kurnia, F., Liu, C., Jung, C. U., & Lee, B. W. (2013) · Applied Physics Letters · doi:10.1063/1.4802263 · Cited by 42 · see citing works

Forming-Free $\hbox{TiO}_{2}$-Based Resistive Switching Devices on CMOS-Compatible W-Plugs

Hermes, C., Bruchhaus, R., & Waser, R. M. (2011) · IEEE Electron Device Letters · doi:10.1109/led.2011.2166371 · Cited by 41 · see citing works

Inherent diode isolation in programmable metallization cell resistive memory elements

Puthentheradam, S. C., Schroder, D. K., & Kozicki, M. N. (2011) · Applied Physics A · doi:10.1007/s00339-011-6292-5 · Cited by 40 · see citing works

Resistive switching with self-rectifying behavior in Cu/SiOx/Si structure fabricated by plasma-oxidation

Tang, G., Zeng, F., Chen, C., Liu, H., Gao, S., Li, S. Z., Song, C., Wang, G. Y., & Pan, F. (2013) · Journal of Applied Physics · doi:10.1063/1.4812318 · Cited by 35 · see citing works

Electrical properties of Ta2O5 thin films deposited on Cu

Ezhilvalavan, S., & Tseng, T. (2000) · Thin Solid Films · doi:10.1016/s0040-6090(99)00873-1 · Cited by 35 · see citing works

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

Tran, X. A., Zhu, L.-W., Liu, W. J., Yeo, Y., Nguyen, B.-Y., & Yu, H. Y. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2223821 · Cited by 34 · see citing works

A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

Tran, X. A., Zhu, W., Gao, B., Kang, J., Liu, W. J., Fang, Z., Wang, Z., Yeo, Y., Nguyen, B.-Y., Li, M. F., et al. (2012) · IEEE Electron Device Letters · doi:10.1109/led.2011.2181971 · Cited by 26 · see citing works

Resolving Voltage–Time Dilemma Using an Atomic-Scale Lever of Subpicosecond Electron–Phonon Interaction

Yang, X. Y., Tudosa, I., Choi, B. J., Chen, A. B. K., & Chen, I. (2014) · Nano Letters · doi:10.1021/nl501710r · Cited by 23 · see citing works

A Self-Rectifying Unipolar HfOx Based RRAM Using Doped Germanium Bottom Electrode

Liu, W. J., Tran, X. A., Yu, H. Y., & Sun, X. W. (2013) · ECS Solid State Letters · doi:10.1149/2.006305ssl · Cited by 20 · see citing works

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5film prepared by magnetron sputtering

Huang, S.-H., Cheng, P.-H., & Chen, Y. (2013) · Chinese Physics B · doi:10.1088/1674-1056/22/2/027701 · Cited by 7 · see citing works

Analog Synaptic Behavior of a Silicon Nitride Memristor

Kim, S., Kim, H., Hwang, S., Kim, M.-H., Chang, Y.-F., & Park, B.-G. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b11191 · Cited by 252 · see citing works

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

Li, C., Han, L., Jiang, H., Jang, M.-H., Lin, P., Wu, Q., Barnell, M., Yang, J. J., Xin, H. L., & Xia, Q. (2017) · Nature Communications · doi:10.1038/ncomms15666 · Cited by 229 · see citing works

Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays

Li, Y., & Ang, K.-W. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202000137 · Cited by 220 · see citing works

Memristive Crossbar Arrays for Storage and Computing Applications

Li, H., Wang, S., Zhang, X., Wang, W., Yang, R., Sun, Z., Feng, W., Lin, P., Wang, Z., Sun, L., et al. (2021) · Advanced Intelligent Systems · doi:10.1002/aisy.202100017 · Cited by 205 · see citing works

Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films

Hu, L., Fu, S., Chen, Y., Cao, H., Liang, L., Zhang, H., Gao, J., Wang, J., & Zhuge, F. (2017) · Advanced Materials · doi:10.1002/adma.201606927 · Cited by 191 · see citing works

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Milano, G., Porro, S., Valov, I., & Ricciardi, C. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201800909 · Cited by 150 · see citing works

Guiding the Growth of a Conductive Filament by Nanoindentation To Improve Resistive Switching

Sun, Y., Song, C., Yin, J., Chen, X., Wan, Q., Zeng, F., & Pan, F. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b09710 · Cited by 131 · see citing works

Neuronal dynamics in HfO x /AlO y -based homeothermic synaptic memristors with low-power and homogeneous resistive switching

Kim, S., Chen, J., Chen, Y., Kim, M., Kim, H., Kwon, M.-W., Hwang, S., Ismail, M., Li, Y., Miao, X., et al. (2018) · Nanoscale · doi:10.1039/c8nr06694a · Cited by 118 · see citing works

Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO 2 /p-Si tunneling junction structure

Yan, X., Zhou, Z., Ding, B., Zhao, J., & Zhang, Y. (2017) · Journal of Materials Chemistry C · doi:10.1039/c6tc04261a · Cited by 108 · see citing works

Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe 2 for In‐Memory Computing

Liu, L., Li, Y., Huang, X., Chen, J., Yang, Z., Xue, K., Xu, M., Chen, H., Zhou, P., & Miao, X. (2021) · Advanced Science · doi:10.1002/advs.202005038 · Cited by 104 · see citing works

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

Kim, S., Jung, S., Kim, M., Chen, Y., Chang, Y., Ryoo, K., Cho, S., Lee, J., & Park, B. (2018) · Small · doi:10.1002/smll.201704062 · Cited by 103 · see citing works

Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

Khan, R., Ilyas, N., Shamim, M. Z. M., Khan, M. I., Sohail, M., Rahman, N., Khan, A. A., Khan, S. N., & Khan, A. (2021) · Journal of Materials Chemistry C · doi:10.1039/d1tc03420k · Cited by 101 · see citing works

The DNA strand assisted conductive filament mechanism for improved resistive switching memory

Sun, B. T., Wei, L., Li, H., Jia, X., Wu, J., & Chen, P. (2015) · Journal of Materials Chemistry C · doi:10.1039/c5tc02732b · Cited by 88 · see citing works

Enhanced resistive switching characteristics in Al 2 O 3 memory devices by embedded Ag nanoparticles

Gao, L., Li, Y., Li, Q., Song, Z., & Ma, F. (2017) · Nanotechnology · doi:10.1088/1361-6528/aa6cd0 · Cited by 88 · see citing works

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Sun, Y., Song, C., Yin, S., Qiao, L., Wan, Q., Wang, R., Zeng, F., & Pan, F. (2020) · Advanced Electronic Materials · doi:10.1002/aelm.202000695 · Cited by 86 · see citing works

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Abbas, H., Li, J., & Ang, D. S. (2022) · Micromachines · doi:10.3390/mi13050725 · Cited by 87 · see citing works

Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing

Ryu, J.-H., & Kim, S. (2020) · Chaos, Solitons & Fractals · doi:10.1016/j.chaos.2020.110236 · Cited by 87 · see citing works

Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application

Rahmani, M. K., Ismail, M., Mahata, C., & Kim, S. (2020) · Results in Physics · doi:10.1016/j.rinp.2020.103325 · Cited by 80 · see citing works

Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware

Kim, G., Son, S., Song, H., Jeon, J. B., Lee, J., Cheong, W. H., Choi, S., & Kim, K. M. (2023) · Advanced Science · doi:10.1002/advs.202205654 · Cited by 72 · see citing works

Reduced Graphene Oxide‐Based Artificial Synapse Yarns for Wearable Textile Device Applications

Park, Y., Park, M., & Lee, J. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201804123 · Cited by 73 · see citing works

Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

Ryu, H., & Kim, S. (2020) · Nanomaterials · doi:10.3390/nano10112159 · Cited by 70 · see citing works

Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

Kim, H., Yun, M.-J., & Kim, S. (2015) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2015.08.082 · Cited by 57 · see citing works

Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing

Ismail, M., Abbas, H., Sokolov, A. S., Mahata, C., Choi, C., & Kim, S. (2021) · Ceramics International · doi:10.1016/j.ceramint.2021.07.257 · Cited by 56 · see citing works

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions

Chen, Y., Lin, C., & Chang, Y. (2021) · Micromachines · doi:10.3390/mi12010050 · Cited by 54 · see citing works

Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiN x /p-Si memory devices

Kim, S., Chang, Y., & Park, B. (2017) · RSC Advances · doi:10.1039/c6ra28477a · Cited by 52 · see citing works

The current limit and self-rectification functionalities in the TiO 2 /HfO 2 resistive switching material system

Yoon, J. H., Kwon, D. E., Kim, Y., Kwon, Y. J., Yoon, K. J., Park, T. H., Shao, X. L., & Hwang, C. S. (2017) · Nanoscale · doi:10.1039/c7nr02215h · Cited by 51 · see citing works

Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta 2 O 5 –Ta system

Gao, S., Zeng, F., Wang, M., Wang, G., Song, C., & Pan, F. (2015) · Physical Chemistry Chemical Physics · doi:10.1039/c5cp01235j · Cited by 49 · see citing works

Pt/Al2O3/TaO X /Ta Self-Rectifying Memristor With Record-Low Operation Current (<2 pA), Low Power (fJ), and High Scalability

Ren, S., Ni, R., Huang, X., Li, Y., Xue, K., & Miao, X. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3134137 · Cited by 48 · see citing works

Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable

Graves, C. E., Dávila, N., Grafals, E. M., Lam, S., Strachan, J. P., & Williams, R. S. (2017) · Applied Physics Letters · doi:10.1063/1.4978757 · Cited by 46 · see citing works

Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film

Chen, Y., Yan, Y. Q., Wu, J., Wang, C., Lin, J. Y., Zhao, J., & Hwang, C. S. (2020) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b22687 · Cited by 45 · see citing works

Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films

Han, U., Lee, D., & Lee, J. (2017) · NPG Asia Materials · doi:10.1038/am.2017.5 · Cited by 44 · see citing works

Performance enhancement of TaOx resistive switching memory using graded oxygen content

Wang, B., Xue, K., Sun, H., Li, Z., Wu, W., Yan, P.-C., Liu, N., Tian, B., Liu, X. X., & Miao, X. (2018) · Applied Physics Letters · doi:10.1063/1.5048098 · Cited by 43 · see citing works

Voltage-Driven Room-Temperature Resistance and Magnetization Switching in Ceramic TiO2/PAA Nanoporous Composite Films

Sun, X., Mo, X., Liu, L., Sun, H., & Pan, C. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b02593 · Cited by 41 · see citing works

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Kim, S., Cho, S., & Park, B. (2016) · AIP Advances · doi:10.1063/1.4941364 · Cited by 39 · see citing works

Resistive switching and synaptic learning performance of a TiO 2 thin film based device prepared by sol–gel and spin coating techniques

Hu, L., Han, W., & Wang, H. (2019) · Nanotechnology · doi:10.1088/1361-6528/ab6472 · Cited by 39 · see citing works

Deep Neural Network Optimized to Resistive Memory with Nonlinear Current-Voltage Characteristics

Kim, H., Kim, T., Kim, J.-S., & Kim, J. (2018) · ACM Journal on Emerging Technologies in Computing Systems · doi:10.1145/3145478 · Cited by 38 · see citing works

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

Chen, Y., Hu, S.-T., Lin, C., Fowler, B. W., Huang, H., Lin, C., Kim, S., Chang, Y., & Lee, J. C. (2018) · Nanoscale · doi:10.1039/c8nr04766a · Cited by 38 · see citing works

A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_{{x}}$ Bilayer Structure

Ma, H., Zhang, X., Wu, F., Luo, Q., Gong, T., Yuan, P., Xu, X., Liu, Y., Zhao, S., Zhang, K., et al. (2018) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2018.2883192 · Cited by 35 · see citing works

Design of high-performance memristor cell using W-implanted SiO2 films

Li, W., Liu, X., Wang, Y., Dai, Z., Wu, W. H., Li, C., Zhang, Y., Liu, Q., Xiao, X., & Jiang, C. (2016) · Applied Physics Letters · doi:10.1063/1.4945982 · Cited by 32 · see citing works

Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory

Kim, S. M., Kim, H. J., Jung, H. J., Kim, S. H., Park, J., Seok, T. J., Park, T. J., & Lee, S. W. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b08941 · Cited by 32 · see citing works

Bending effect on the resistive switching behavior of a NiO/TiO 2 p–n heterojunction

Cui, H., Li, J., & Yuan, H.-L. (2018) · RSC Advances · doi:10.1039/c8ra01180j · Cited by 31 · see citing works

Controlled Majority-Inverter Graph Logic With Highly Nonlinear, Self-Rectifying Memristor

Ni, R., Yang, L., Huang, X.-D., Ren, S.-G., Wan, T.-Q., Li, Y., & Miao, X.-S. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3106234 · Cited by 31 · see citing works

The Co-Improvement of Selectivity and Uniformity on NbOₓ-Based Selector by Al-Doping

Chen, A., Fu, Y., Ma, G., Yang, G., Liu, N., Zhao, X., Zhang, Z., Li, T., Wan, H., Rao, Y., et al. (2022) · IEEE Electron Device Letters · doi:10.1109/led.2022.3165789 · Cited by 29 · see citing works

Rectification‐Regulated Memristive Characteristics in Electron‐Type CuPc‐Based Element for Electrical Synapse

Wang, L., Yang, J., Zhu, Y., Yi, M., Xie, L., Ju, R., Wang, Z., Liu, L., Li, T., Zhang, C., et al. (2017) · Advanced Electronic Materials · doi:10.1002/aelm.201700063 · Cited by 28 · see citing works

Time and rate dependent synaptic learning in neuro-mimicking resistive memories

Ahmed, T., Walia, S., Mayes, E. L. H., Ramanathan, R., Bansal, V., Bhaskaran, M. C., Sriram, S., & Kavehei, O. (2019) · Scientific Reports · doi:10.1038/s41598-019-51700-0 · Cited by 28 · see citing works

Self-rectifying resistance switching memory based on a dynamic p–n junction

Wu, C., Li, X., Xu, X., Lee, B. W., Chae, S. C., & Liu, C. (2020) · Nanotechnology · doi:10.1088/1361-6528/abc782 · Cited by 27 · see citing works

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

Wang, M. J., Gao, S., Zeng, F., Song, C., & Pan, F. (2016) · AIP Advances · doi:10.1063/1.4941839 · Cited by 27 · see citing works

A facile hydrothermal synthesis and memristive switching performance of rutile TiO2 nanowire arrays

Yu, Z., Qu, X., Yang, W., Peng, J., & Xu, Z. (2016) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2016.07.167 · Cited by 26 · see citing works

Atomic Layer Deposited Oxygen‐Deficient TaOx Layers for Electroforming‐Free and Reliable Resistance Switching Memory

Kuzmichev, D. S., Lebedinskiǐ, Y. Y., Hwang, C. S., & Markeev, A. M. (2018) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.201800429 · Cited by 25 · see citing works

Forming compliance dominated memristive switching through interfacial reaction in Ti/TiO2/Au structure

Tang, Z., Fang, L., Xu, N., & Liu, R. (2015) · Journal of Applied Physics · doi:10.1063/1.4935622 · Cited by 23 · see citing works

Self-Rectifying Resistive Memory with a Ferroelectric and 2D Perovskite Lateral Heterostructure

Son, J., Lee, M., Sannyal, A., Yun, H., Cheon, J., Lee, S., Park, J. S., Kang, S. J., Jang, J., & Jeong, B. (2025) · ACS Nano · doi:10.1021/acsnano.4c07869 · Cited by 22 · see citing works

Hydrothermal synthesis and memristive switching behaviors of single-crystalline anatase TiO2 nanowire arrays

Yu, Z., Qu, X., Yang, W., Peng, J., & Xu, Z. (2016) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2016.07.216 · Cited by 22 · see citing works

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

Choi, J., & Kim, S. (2020) · Coatings · doi:10.3390/coatings10080765 · Cited by 21 · see citing works

Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si

Yu, M., Fang, Y., Wang, Z., Pan, Y., Li, M., Cai, Y., & Huang, R. (2016) · Journal of Applied Physics · doi:10.1063/1.4951007 · Cited by 21 · see citing works

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer

Chen, A., Ma, G., Zhang, Z., Lin, C., Lin, C.-C., Chang, T., Li, T., & Wang, H. (2019) · Advanced Electronic Materials · doi:10.1002/aelm.201900756 · Cited by 21 · see citing works

Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode

Kim, W., Yoo, C., Park, E.-S., Ha, M., Jeon, J. W., Kim, G. S., Woo, K. S., Lee, Y., & Hwang, C. S. (2019) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.9b10891 · Cited by 20 · see citing works

Engineering Method for Tailoring Electrical Characteristics in TiN/TiOx/HfOx/Au Bi-Layer Oxide Memristive Devices

Park, S., Klett, S., Ivanov, T., Knauer, A., Döll, J., & Ziegler, M. (2021) · Frontiers in Nanotechnology · doi:10.3389/fnano.2021.670762 · Cited by 20 · see citing works

Flexible self-rectifying synapse array for energy-efficient edge multiplication in electrocardiogram diagnosis

Lee, Y., Rhee, H., Kim, G., Cheong, W. H., Kim, D. H., Song, H., Kay, S. N., Lee, J., & Kim, K. M. (2025) · Nature Communications · doi:10.1038/s41467-025-59589-2 · Cited by 19 · see citing works

Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

Chen, Y., Lee, J. K., & Lin, C. (2021) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2021.3095438 · Cited by 19 · see citing works

Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration

Ye, C., Xu, Z., Chang, K., Li, L., Lin, X., Zhang, R., Zhou, Y., Xiong, W., & Kuo, T.-P. (2019) · Nanoscale · doi:10.1039/c9nr07470h · Cited by 18 · see citing works

Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO2/Ni Selector Structure

Lee, K.-J., Chang, Y., Lee, C.-J., Wang, L., & Wang, Y. (2018) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2018.2801278 · Cited by 17 · see citing works

Magnetism modulation and conductance quantization in a gadolinium oxide memristor

Xie, Z., Gao, S., Ye, X., Yang, H., Gong, G., Lü, Y., Ye, J., Liu, G., & Li, R. (2020) · Physical Chemistry Chemical Physics · doi:10.1039/d0cp03767b · Cited by 16 · see citing works

CdS Nanoribbon‐Based Resistive Switches with Ultrawidely Tunable Power by Surface Charge Transfer Doping

Shao, Z., Jie, J., Jiang, T., Wu, X., Li, K., Xia, F., Zhang, X., & Zhang, X. (2018) · Advanced Functional Materials · doi:10.1002/adfm.201706577 · Cited by 16 · see citing works

Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application

Sun, Z., Wei, L., Feng, C., Miao, P., Guo, M., Yang, H., Li, J., & Zhao, Y. (2016) · Advanced Electronic Materials · doi:10.1002/aelm.201600361 · Cited by 16 · see citing works

Three-Dimensional Crossbar Arrays of Self-rectifying Si/SiO2/Si Memristors

Li, C., & Xia, Q. (2019) · Springer eBooks · doi:10.1007/978-3-319-76375-0_28 · Cited by 16 · see citing works

BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation

Chen, Y., Lin, C., Lin, C.-H., & Chang, Y. (2023) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2023.3237508 · Cited by 15 · see citing works

Oxygen Vacancies Controlled Highly Stable Bilayer Analog Synapse Used for Neuromorphic Computing Systems

Gawai, U., Kumar, D., Singh, A., Wu, C., & Chang, K. (2022) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.2c00272 · Cited by 15 · see citing works

Multi-mode resistive switching behaviors induced by modifying Ti interlayer thickness and operation scheme

Wang, M. J., Zeng, F., Gao, S., Song, C., & Pan, F. (2016) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2016.01.177 · Cited by 14 · see citing works

Resistive switching characteristics in manganese oxide and tantalum oxide devices

Hu, Q., Abbas, Y., Abbas, H., Park, M. R., Yoon, T., & Kang, C. J. (2016) · Microelectronic Engineering · doi:10.1016/j.mee.2016.02.050 · Cited by 14 · see citing works

Detection of resistive switching behavior based on the Al 2 O 3 /ZnO/Al 2 O 3 structure with alumina buffers

Qiao, Q., Xu, D., Li, Y. W., Zhang, J. Z., Hu, Z., & Chu, J. H. (2016) · Thin Solid Films · doi:10.1016/j.tsf.2016.12.053 · Cited by 14 · see citing works

Boron nitride and molybdenum disulfide as 2D composite element selectors with flexible threshold switching

Sun, Y., Wen, D., & Sun, F. (2021) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2021.159321 · Cited by 13 · see citing works

Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

Hsieh, W.-K., Chuang, R. W., & Chang, S. (2015) · RSC Advances · doi:10.1039/c5ra15993h · Cited by 13 · see citing works

Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor

Shih, Y., Wang, T.-H., Huang, J., Lai, C., Hong, Y., & Chueh, Y. (2016) · RSC Advances · doi:10.1039/c6ra12408a · Cited by 13 · see citing works

Ultrathin Anion Conductors Based Memristor

Xiong, X., Xiong, F., Tian, H., Wang, Z., Wang, Y., Tao, R., Klausen, L. H., & Dong, M. (2021) · Advanced Electronic Materials · doi:10.1002/aelm.202100845 · Cited by 13 · see citing works

Memristive devices based on Cu-doped NbO films with large self-rectifying ratio

Huang, J., Huang, H.-M., Xiao, Y., Wang, T., & Guo, X. (2021) · Solid State Ionics · doi:10.1016/j.ssi.2021.115732 · Cited by 13 · see citing works

Self-rectifying resistive switching in MAPbI3-based memristor device

Pham, P., Vo, T.-Q. T., Le, D. K., Huynh, C. T., Ngo, T. T., Nguyen, P. T., Phạm, A. T. T., Vu, N. H., Phan, T. B., Kawazoe, Y., et al. (2024) · Applied Physics Letters · doi:10.1063/5.0178032 · Cited by 11 · see citing works

Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

Lu, H., Yuan, X.-C., Chen, B., Gong, C., Zeng, H., & Wei, X. (2017) · Journal of Sol-Gel Science and Technology · doi:10.1007/s10971-017-4344-9 · Cited by 11 · see citing works

High-performance self-rectifying memristor array based on Pt/HfO 2/Ta 2O 5− x /Ti structure for flexible electronics

He, S., Ye, X., Zhu, X., Zhong, Q., Liu, Y., Li, G., Liu, R., Meng, X., Xiao, Y., Yan, S., et al. (2024) · Nano Research · doi:10.26599/nr.2025.94907085 · Cited by 10 · see citing works

Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM

Varun, I., Bharti, D., Mahato, A. K., Raghuwanshi, V., & Tiwari, S. P. (2018) · Solid State Ionics · doi:10.1016/j.ssi.2018.08.003 · Cited by 10 · see citing works

Improved uniformity in resistive switching behaviors by embedding Cu nanodots

Yuan, M., Dong, X., Niu, Y., Liu, B., Chen, X., Zheng, D., Dong, A., & Wang, H. (2020) · Nanotechnology · doi:10.1088/1361-6528/ab9a73 · Cited by 9 · see citing works

Flexible Ta/TiO x /TaO x /Ru memristive synaptic devices on polyimide substrates

Li, J., Hao, C., Guo, S., Li, Y., Ren, J., Zhou, L., & Zhao, J. (2021) · Nanotechnology · doi:10.1088/1361-6528/ac00e0 · Cited by 9 · see citing works

Selector-only-memory device using chalcogenide thin film in a 4k crossbar array

Seo, H. K., Jeong, W. H., Jung, J., Park, M. H., Kim, G. H., & Yang, M. (2025) · Materials Science and Engineering R Reports · doi:10.1016/j.mser.2025.101169 · Cited by 8 · see citing works

Dopant concentration dependent resistive switching characteristics in Cu/SiN x /Si structure

Kim, S., Kim, M., Kim, T., Cho, S., & Park, B. (2016) · Journal of Alloys and Compounds · doi:10.1016/j.jallcom.2016.06.055 · Cited by 8 · see citing works

Temperature sensitivity and short-term memory in electroforming-free low power carbon memristors

Murdoch, B. J., Raeber, T. J., Zhao, Z. C., McKenzie, D. R., McCulloch, D. G., & Partridge, J. G. (2019) · Applied Physics Letters · doi:10.1063/1.5094652 · Cited by 8 · see citing works

Switching failure behaviors and doping enhanced performances of Ni/Al2O3/p+Si resistive switching devices

Gao, L., Song, Z., Li, Y., & Ma, F. (2019) · Journal of Applied Physics · doi:10.1063/1.5100101 · Cited by 8 · see citing works

Extraction of Switching Parameters for Sr‐Doped YMnO3 Thin Film

Rathod, K. N., Gadani, K., Boricha, H., Sagapariya, K., Vaishnani, A., Dhruv, D. B., Joshi, A. D., Singh, J. P., Chae, K. H., Asokan, K., et al. (2019) · physica status solidi (a) · doi:10.1002/pssa.201900780 · Cited by 8 · see citing works

Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure

Deng, Y., Xu, X., Zhang, L., Du, F., Liu, Q., Chen, J., Meng, K., Wu, Y., Yang, M., & Jiang, Y. (2022) · Journal of Material Science and Technology · doi:10.1016/j.jmst.2022.04.029 · Cited by 8 · see citing works

High-performance and self-rectifying resistive random access memory based on SnO2 nanorod array: ZnO nanoparticle structure

Liu, Q., Li, Y., Wang, W., Yue, W., Gao, S., Zhang, C., Cao, B., & Chen, Z. (2019) · Applied Physics Express · doi:10.7567/1882-0786/ab4d30 · Cited by 8 · see citing works

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

Mao, S., Zhang, X., Sun, B. T., Li, B., Zhu, S., Zheng, P., Zheng, L., & Xia, Y. (2018) · Functional Materials Letters · doi:10.1142/s1793604718500388 · Cited by 7 · see citing works

Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses

Mahata, C., Pyo, J., Jeon, B., Ismail, M., Kang, M., & Kim, S. (2022) · Materials · doi:10.3390/ma15248858 · Cited by 7 · see citing works

Compliance-free, analog RRAM devices based on SnOx

Garlapati, S. K., Simanjuntak, F. M., Stathopoulos, S., Jalaluddeen, A. S., Napari, M., & Prodromakis, T. (2024) · Scientific Reports · doi:10.1038/s41598-024-64662-9 · Cited by 7 · see citing works

Localised nanoscale resistive switching in GaP thin films with low power consumption

Kurnia, F., Liu, C., Liu, G., Vasudevan, R. K., Yang, S. M., Kalinin, S. V., Nagarajan, V., & Hart, J. N. (2017) · Journal of Materials Chemistry C · doi:10.1039/c6tc04895a · Cited by 7 · see citing works

Noise tailoring, noise annealing, and external perturbation injection strategies in memristive Hopfield neural networks

Fehérvári, J. G., Balogh, Z., Török, T. N., & Halbritter, A. (2024) · APL Machine Learning · doi:10.1063/5.0173662 · Cited by 6 · see citing works

Bipolar resistive switching with self-rectifying behaviors in p-type AgCr1−xMgxO2 thin films

Li, C. H., Yang, B., Hu, W. J., Wei, R., Hu, L., Tang, X., Yang, J., Dai, J., Zhu, X., & Sun, Y. (2019) · Journal of Applied Physics · doi:10.1063/1.5097848 · Cited by 6 · see citing works

A bidirectional threshold switching selector with a symmetric multilayer structure

Li, Q., Li, K., Wang, Y., Liu, S., & Song, B. (2020) · Science China Information Sciences · doi:10.1007/s11432-020-2960-x · Cited by 6 · see citing works

Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer

Su, S., Jian, X., Wang, F., Han, Y., Tian, Y.-X., Wang, X., Zhang, H., & Zhang, K. (2016) · Chinese Physics B · doi:10.1088/1674-1056/25/10/107302 · Cited by 6 · see citing works

Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of ∼5 nm

Hsu, C.-C., Wu, W.-C., Xiao, Z.-K., Jhang, W.-C., Qiu, Z.-R., & Kim, S. (2024) · Physica B Condensed Matter · doi:10.1016/j.physb.2024.416681 · Cited by 5 · see citing works

Fabrication and investigation of quaternary Ag–In–Zn–S quantum dots-based memristors with ultralow power and multiple resistive switching behaviors

He, N., Tao, L., Zhang, Q., Liu, X., Lian, X., Hu, E., Sheng, Y., Xu, F., & Tong, Y. (2021) · Nanotechnology · doi:10.1088/1361-6528/abe32e · Cited by 5 · see citing works

Polymer–carbon dot hybrid structure for a self-rectifying memory device by energy level offset and doping

Lu, H., Chen, Y., Chang, Q. H., Cheng, S., Ding, Y., Chen, J., Xiu, F., Wang, X., Ban, C., Liu, Z., et al. (2018) · RSC Advances · doi:10.1039/c8ra01928b · Cited by 5 · see citing works

High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism

Hsu, C.-C., Wen, X.-M., Xiao, K.-Z., Jhang, W.-C., Hsu, M.-Y., Joodaki, M., & Chen, H. J. H. (2025) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2025.3599500 · Cited by 4 · see citing works

Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack

Ma, H., Feng, J., Lv, H., Gao, T., Xu, X., Luo, Q., Gong, T., & Yuan, P. (2017) · Nanoscale Research Letters · doi:10.1186/s11671-017-1905-3 · Cited by 24 · see citing works

Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta₂O₅/HfO_2‐x/TiN Structure

Yoon, J. H., Song, S. J., Yoo, I., Seok, J. Y., Yoon, K. J., Kwon, D. E., Park, T. H., & Hwang, C. S. (2014) · Advanced Functional Materials · doi:10.1002/adfm.201400064 · Cited by 277 · see citing works

Interface-Driven Bipolar Resistive Switching with Intrinsic Self-Rectifying Behavior in a p-LaCrO 3 /n-Si Heterostructure

Cheng, W., Li, X., Chu, J., Feng, T., Sun, C., Hong, P., Zhang, L., Yi, M., & He, Y. (2026) · ACS Applied Electronic Materials · doi:10.1021/acsaelm.6c00293

Ti-Doped GaOxResistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers

Park, J. H., Jeon, D. S., & Kim, T. G. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b10266 · Cited by 17 · see citing works

TiO x -based self-rectifying memory device for crossbar WORM memory array applications*

Fu, L., Song, X., Gao, X., Wu, Z., Chen, S., & Li, Y. (2020) · Chinese Physics B · doi:10.1088/1674-1056/abc548 · Cited by 1 · see citing works