Masin, F.

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Masin, F., De Santi, C., Lettens, J., Franchi, J., Domeij, M., Moens, P., Meneghini, M., Meneghesso, G., & Zanoni, E. (2021) · Journal of Applied Physics

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 29

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

Canato, E., Masin, F., Borga, M., Zanoni, E., Meneghini, M., Meneghesso, G., Stockman, A., Banerjee, A., & Moens, P. (2019) · 2019 IEEE International Reliability Physics Symposium (IRPS)

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 24

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Modolo, N., Fregolent, M., Masin, F., Benato, A., Bettini, A., Buffolo, M., De Santi, C., Borga, M., Posthuma, N., Bakeroot, B., et al. (2022) · Microelectronics Reliability

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 16