Lavizzari, Simone

Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays

Boniardi, M., Ielmini, D., Lavizzari, S., Lacaita, A. L., Redael, A., & Pirovano, A. (2010) · IEEE Transactions on Electron Devices

Phase-change materials and chalcogenidesAdvanced Memory and Neural Computing

Cited by 106

Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications

Florent, K., Lavizzari, S., Popovici, M., Di Piazza, L., Celano, U., Groeseneken, G., & Van Houdt, J. (2017) · Journal of Applied Physics

Ferroelectric and Negative Capacitance DevicesSemiconductor materials and devices

Cited by 83

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based Modeling

Lavizzari, S., Ielmini, D., Sharma, D., & Lacaita, A. L. (2009) · IEEE Transactions on Electron Devices

Phase-change materials and chalcogenidesAdvanced Memory and Neural Computing

Cited by 74