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Cited by 106Phase-change materials and chalcogenidesAdvanced Memory and Neural ComputingSemiconductor materials and devices

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Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays

Boniardi, Mattia, Ielmini, Daniele, Lavizzari, Simone, Lacaita, Andrea L., Redael, Andrea, Pirovano, Agostino·2010·IEEE Transactions on Electron Devices
DOI 10.1109/ted.2010.2058771
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Abstract

The phase-change memory (PCM), based on the reversible phase transition in a chalcogenide material, is among the most attractive memory concepts for next-generation nonvolatile memories. Due to the metastable nature of the amorphous state, the memory can exhibit a time variation of resistance after programming as a result of two main mechanisms: 1) structural relaxation (SR), which is an atomic rearrangement to minimize the defect density, and 2) crystallization of the amorphous chalcogenide. SR has been mostly studied at the single-cell level, whereas a statistical analysis and modeling is necessary for device reliability estimation and prediction. This work studies the statistical behavior of SR in PCM devices, through experimental and modeling approaches. Statistical SR data from PCM arrays are shown, and a Monte Carlo model for SR statistics is proposed, based on previous physical modeling of the SR process. This model allows for long-term, physics-based, and array-level reliability extrapolations in large PCM arrays.

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References 27 · Cited by 106

Research works printed but not linked: 26

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Metadata

Authors
Boniardi, M., Ielmini, D., Lavizzari, S., Lacaita, A. L., Redael, A., & Pirovano, A.
Affiliations
  • Politecnico di Milano (IT)
  • Micron (Italy) (IT)
  • Istituto di Fotonica e Nanotecnologie (IT)
ORCID
Venue
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2010-10
Volume
57
Issue
10
Pages
2690-2696
ISSN
0018-9383 (ISSN-L)
DOI
10.1109/ted.2010.2058771
OpenAlex
W2158464944
Cited by
106
References
27
Citations by year
2026: 2 · 2025: 11 · 2024: 18 · 2023: 7 · 2022: 15 · 2021: 7 · 2020: 9 · 2019: 7 · 2018: 6 · 2017: 3 · 2016: 4 · 2015: 2 · 2014: 3 · 2013: 5 · 2012: 6
FWCI
1.89
Type
journal article
Language
en
Open access
closed
Licence
ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
Locations
  • IEEE Transactions on Electron Devices (publishedVersion)
  • Virtual Community of Pathological Anatomy (University of Castilla La Mancha) (submittedVersion)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › Phase-change materials and chalcogenides
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
phase-change memory, structural relaxation, resistance drift, chalcogenides, amorphous phase, crystallization, non-volatile memory, device reliability, Monte Carlo simulation, statistical modeling, memory arrays, defect density

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