Si, M.

Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs

Shin, S. H., Masuduzzaman, M., Gu, J. J., Wahab, M. A., Conrad, N., Si, M., Ye, P. D., & Alam, M. A. (2013) · 2013 IEEE International Electron Devices Meeting

Advancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and Applications

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Germanium nMOSFETs With Recessed Channel and S/D: Contact, Scalability, Interface, and Drain Current Exceeding 1 A/mm

Wu, H., Si, M., Dong, L., Gu, J., Zhang, J., & Ye, P. D. (2015) · IEEE Transactions on Electron Devices

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 32