The DOI matches its Crossref record.
Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs
Abstract
Gate-all-around (GAA) transistors use multiple parallel nanowires to achieve the desired ON current. The fabrication and performance of GAA transistors have been reported, however, a fundamental consideration, namely, the scaling and variability of transistor performance as a function of the number of parallel NWs is yet to be discussed. In this paper, we (i) examine how the overall performance matrix (e.g., ION, IOFF, Vth, SS, RC) depends on the number of parallel NWs, (ii) theoretically interpret the results in terms of variability and self-heating among the NWs, (iii) compare the reliability of multiple NW devices (ΔVth, ΔSS, both stress and recovery) with a planar device of similar technology. We find that the self-heating and NW-to-NW variability are reflected in novel properties of variability and reliability of GAA transistors that are neither anticipated nor observed in the corresponding planar technology.
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“Compared to planar MOSFET structures, surrounding gate architecture has lesser variability and reliability issues due to its structural design, which provides more effective control over the flow of charge carriers [65].”
From Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET (2023) · cites this paper as [65]
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Research works printed but not linked: 8
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Cited by
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Das, A., Rewari, S., Kanaujia, B. K., Deswal, S. S., & Gupta, R. S. (2023) · Physica Scripta · doi:10.1088/1402-4896/acde16 · Cited by 49
Metadata
- Authors
- Shin, S. H., Masuduzzaman, M., Gu, J. J., Wahab, M. A., Conrad, N., Si, M., Ye, P. D., & Alam, M. A.
- Affiliations
- Purdue University West Lafayette (US)
- Venue
- 2013 IEEE International Electron Devices Meeting
- Publisher
- IEEE
- Published
- 2013-12
- Pages
- 7.5.1-7.5.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W1975961289
- Cited by
- 34
- References
- 0
- Citations by year
- 2026: 1 · 2025: 1 · 2023: 3 · 2022: 3 · 2021: 3 · 2020: 2 · 2019: 2 · 2018: 1 · 2017: 3 · 2016: 4 · 2015: 7 · 2014: 4
- FWCI
- 6.09
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Technical digest - International Electron Devices Meeting/Technical digest (publishedVersion)
- Funders
- Harvard University
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Nanowire Synthesis and Applications
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Keywords
- gate-all-around transistors, III-V MOSFETs, transistor scaling, self-heating, threshold voltage variation, device reliability
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- CoChat. (2026). Citation check: Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs. https://app.cochat.ai/papers/10.1109/iedm.2013.6724582
- The paper
- Shin, S. H., Masuduzzaman, M., Gu, J. J., Wahab, M. A., Conrad, N., Si, M., Ye, P. D., & Alam, M. A. (2013). Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs. 2013 IEEE International Electron Devices Meeting. https://doi.org/10.1109/iedm.2013.6724582
