Yoon, Jong-Hyeok

29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification

Yoon, J.-H., Chang, M., Khwa, W.-S., Chih, Y.-D., Chang, M.-F., & Raychowdhury, A. (2021) · 2021 IEEE International Solid- State Circuits Conference (ISSCC)

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 86