Akarvardar, K.

16.4 An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications

Chih, Y.-D., Lee, P.-H., Fujiwara, H., Shih, Y.-C., Lee, C.-F., Naous, R., Chen, Y.-L., Lo, C.-P., Lu, C.-H., Mori, H., et al. (2021) · 2021 IEEE International Solid- State Circuits Conference (ISSCC)

Advanced Memory and Neural ComputingLow-power high-performance VLSI design

Cited by 384

Investigation of the Four-Gate Action in<tex>$hbox G^4$</tex>-FETs

Dufrene, B., Akarvardar, K., Cristoloveanu, S., Blalock, B. J., Gentil, P., Kolawa, E., & Mojarradi, M. M. (2004) · IEEE Transactions on Electron Devices

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 56

Low-frequency noise in SOI four-gate transistors

Akarvardar, K., Dufrene, B. M., Cristoloveanu, S., Gentil, P., Blalock, B. J., & Mojarradi, M. M. (2006) · IEEE Transactions on Electron Devices

Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design

Cited by 51

Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor

Akarvardar, K., Cristoloveanu, S., & Gentil, P. (2006) · IEEE Transactions on Electron Devices

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 48

Depletion-All-Around Operation of the SOI Four-Gate Transistor

Akarvardar, K., Cristoloveanu, S., Gentil, P., Schrimpf, R. D., & Blalock, B. J. (2007) · IEEE Transactions on Electron Devices

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

Cited by 41