Shur, M.S.

Self-Heating in High-Power AlGaN-GaN HFETs

Gaska, R., Osinsky, A., Yang, J. W., & Shur, M. S. (1998) · IEEE Electron Device Letters

GaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Cited by 301

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

Rumyantsev, S. L., Shur, M. S., Levinshtein, M. E., Ivanov, P. A., Palmour, J. W., Agarwal, A. K., Hull, B. A., & Ryu, S.-H. (2009) · Semiconductor Science and Technology

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

Cited by 66